Electrodeposition of semiconductors

Lincot, Daniel

doi:10.1016/j.tsf.2005.01.032

Cited by 423 publications

(295 citation statements)

References 64 publications

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“…These contributions are located at 270 and 372 cm −1 , the last one appearing as a shoulder at the low-frequency side of the 377 cm −1 MoS 2 mode, and correspond to the Se-Se and S-S bands of the A 1g vibration of the covellite structure. The correlation observed between the intensity of these weak modes and that of the intense MoS 2 ones suggests that traces of the Cu͑S,Se͒ phase are located at the intermediate MoS 2 region.…”

Section: B Sulfur Annealed Filmsmentioning

confidence: 85%

“…2 However, the appearance of OVC phases in the film clearly shows the complexity of the electrodeposition process. In the present case, the Cu and Se excess conditions favor the nucleation of Se, Cu 2 Se, and CuSe nanocrystallites.…”

Section: ͑1͒mentioning

confidence: 99%

“…This technology has a huge market potential, since it replaces several vacuum sputtering deposition processes, which are usually required to produce good-quality absorbers, with a single electrodeposition step. 2 Exploitation of the simplicity, low-cost process capability, and scalability to industrial production characteristic of the electrodeposition processes will allow significant cost reduction to be obtained in relation to the costs of nowadays standard thin-film solar cell technologies. Solar cell efficiencies up to 11% have already been reported for devices fabricated according to this two-step electrodeposition and sulfurization process.…”

Section: Introductionmentioning

confidence: 99%

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Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

Izquierdo-Roca

Pérez-Rodrı́guez

Romano‐Rodríguez

et al. 2007

Journal of Applied Physics

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This article reports a detailed Raman scattering and microstructural characterization of S-rich CuIn͑S,Se͒ 2 absorbers produced by electrodeposition of nanocrystalline CuInSe 2 precursors and subsequent reactive annealing under sulfurizing conditions. Surface and in-depth resolved Raman microprobe measurements have been correlated with the analysis of the layers by optical and scanning electron microscopy, x-ray diffraction, and in-depth Auger electron spectroscopy. This has allowed corroboration of the high crystalline quality of the sulfurized layers. The sulfurizing conditions used also lead to the formation of a relatively thick MoS 2 intermediate layer between the absorber and the Mo back contact. The analysis of the absorbers has also allowed identification of the presence of In-rich secondary phases, which are likely related to the coexistence in the electrodeposited precursors of ordered vacancy compound domains with the main chalcopyrite phase, in spite of the Cu-rich conditions used in the growth. This points out the higher complexity of the electrodeposition and sulfurization processes in relation to those based in vacuum deposition techniques.

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Section: B Sulfur Annealed Filmsmentioning

confidence: 85%

Section: ͑1͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

Izquierdo-Roca

Pérez-Rodrı́guez

Romano‐Rodríguez

et al. 2007

Journal of Applied Physics

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“…The electrodeposition method is probably the most appropriate and promising. This is due to its low cost, easiness, high efficiency, non vacuum and stability of the product [7,8].…”

Section: Introductionmentioning

confidence: 99%

Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Bouraiou¹,

Aida²,

Mosbah³

et al. 2009

Braz. J. Phys.

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In this paper, we report the effect of annealing time on the properties of copper indium diselenide CuInSe 2 films. The CuInSe 2 thin films have been grown at room temperature by electrochemical deposition technique using two electrodes system. The as deposited films were annealed under argon atmosphere at 300 o C during 15, 30, 45 and 60 min. The structural and morphological properties of the resulting films were characterized respectively by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical band gap was estimated from transmittance measurements. We have found, that after annealing, all films present CuInSe 2 in its chalcopyrite structure and with preferred orientation along <112> direction. The film annealed during 45 min exhibits better crystallinity and excellent optical properties. The SEM pictures show that the elaborated films have a uniform surface morphology with a homogeneity distribution of crystallites, the grain became higher in size with prolongation of annealing time; it lays in the range of 195 to 515Å.

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“…In industrial processes the most widely used oxide is WO 3 , the electrochromism effect of which is governed by its reversible reaction: Nevertheless, the ZnO semiconductor with a band gap of 3.4 eV is of increasing interest in applications such as photovoltaic cells, sensors and phototonic devices [13][14][15][16][17][18][19][20]. Films of ZnO can be produced by electrodeposition at temperatures over the 60ºC to 80ºC [21][22][23][24][25][26][27], being a cheap and easy technique. In this work is found the effect of optical switching observed in ZnO films electrodeposited in a bath of 0.05M Zn(NO 3 ) 2 + 0.1M…”

Section: Accepted M Manuscriptmentioning

confidence: 99%

Electrochromic switching of electrodeposited ZnO+Zn5(OH)8Cl2 films

2011

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This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. films on a gold electrode in a bath of 0.05M Zn(NO 3 ) 2 + 0.1M KCl. The coating turns black when cathodic polarization is applied yet when the current is removed the electrode immediately returns to a white colour. This optical effect is reversible and can be switched through various cycles. A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT

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Electrodeposition of semiconductors

Cited by 423 publications

References 64 publications

Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Electrochromic switching of electrodeposited ZnO+Zn5(OH)8Cl2 films

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