Electron Diffraction Analysis of the Structure of Carbon Nanopillars along the Growth Direction

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

“…The preparation requires the control of the milling process by preliminarily creating a stream file with a table of ion beam stopping positions and dwell times to form the specimen with such complex stair-step shape, as described in detail in ref. 34 . Two other samples with shorter NWs were sectioned at a distance of about 200 nm from the substrate.…”