Electron drift velocity in high electric fields in zincblende, wurtzite and rocksalt GaN

Brazis, R.; Nausewicz, D.; Raguotis, R.

doi:10.1088/1742-6596/193/1/012031

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…Many studies on wurtzite GaN drift velocity characteristics have been performed, particularly theoretical predictions using analytical band and full band MC models. The simulated results [6,9,13,[16][17][18][19][20][21][22][23][24][25][26][27][28] show great discrepancy from each other and from the data derived from experimental measurements as depicted in figure 2. Although the drift velocity measurements of [20] show a similar trend to the theoretical work, the experimental results of [9,29] show that the peak drift velocity and the drop of drift velocity in negative differential resistance (NDR) region are much smaller than that predicted from theoretical simulations.…”

Section: Introductionmentioning

confidence: 82%

Monte Carlo evaluation of GaN THz Gunn diodes

Lee

Ong

Choo

et al. 2021

Semicond. Sci. Technol.

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The performances of GaN-based Gunn diodes have been studied extensively for more than two decades, however, the diverging electron drift velocity characteristics employed in these studies merit a review of the potential of GaN Gunn diodes as THz sources. A self-consistent analytical-band Monte Carlo (MC) model capable of reproducing the electron drift velocity characteristics of GaN predicted theoretically by the first-principles full band MC model is used in this work to evaluate systematically the performance of GaN Gunn diodes in transit time mode. The optimal fundamental frequency of a sustainable current oscillation under a DC bias is determined as a function of the length of its transit region. The MC model predicts a GaN Gunn diode with a transit length of 500 nm capable of operating at frequencies up to 625 GHz with an estimated output power of 3.0 W. An MC model takes into account the effect of defects in order to replicate the much lower electron drift velocity characteristics derived from experimental work and predicts THz signal generation of 2.5 W at highest sustainable operating frequency of 326 GHz in a Gunn diode with a transit length of 700 nm.

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Section: Introductionmentioning

confidence: 82%

Monte Carlo evaluation of GaN THz Gunn diodes

Lee

Ong

Choo

et al. 2021

Semicond. Sci. Technol.

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“…The presented novel one-particle Monte Carlo (MC) method has been used previously in [3][4][5][6][7][8][9][10]. Dramatic increases in the number of longitudinal optical (LO) phonons by several orders in comparison with the thermal equilibrium distribution have been obtained.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of non-equilibrium phonon accumulation in cubic GaN crystal

Raguotis¹,

Bumelienė²

2014

Phys. Scr.

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The novel one-particle Monte Carlo procedure for the simulation of the longitudinal optical phonon distribution accumulation generated by electrons in a high electric field is presented in detail. The phonon and electron distributions are obtained employing novel code in zinc-blend n-type GaN crystals. The main quality of this code is the avoidance of the short-time-step procedure appropriate to the conventional ensemble Monte Carlo method. The maximum value of the phonon distribution function dramatically exceeds the thermal-equilibrium one. The influence of the phonon accumulation on the electron kinetic characteristics of zinc-blend GaN and other features, such as longitudinal optical phonon number inversion with respect to acoustic phonon modes, are discussed.

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