Electron-impact excitation cross sections for Ar and Ar<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e5666" altimg="si132.svg"><mml:msup><mml:mrow/><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:math> by unitarized distorted-wave approximation

Kwon, Duck-Hee; Cho, Y.-S.

doi:10.1016/j.adt.2020.101385

Cited by 7 publications

(2 citation statements)

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“…Further, it is worth to mention that the unitarization of T-Matrix does not necessarily always improve the results near the threshold energy regime. Very recently, Kwon and Cho [20] reported the comparison of the RDW cross sections calculated with unitarized T-matrices with previous RDW results reported by our group on Ar and Ar + [21][22][23]. They reported a comparison of three types of unitarizations: Type I (nonunitarized), Type II, and Type III.…”

Section: Introductionmentioning

confidence: 92%

“…It is also worth mentioning the comparison presented in this study showed our RDW calculation with MCDF wavefunctions showed a reasonable agreement of our RDW cross sections with respective measurements even in low energy regimes. It also reflects the importance of relativistic calculations even for low atomic number atoms such as Argon (Z = 18) [20].…”

Section: Introductionmentioning

confidence: 92%

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Fine structure resolved excitation cross sections of singly ionized Ga for the modeling and diagnostics of Ga plasmas

Suresh,

Priti,

Srivastava

et al. 2024

Plasma Sources Sci. Technol.

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Calculation of electron impact excitation cross sections for singly charged Ga ions plays a crucial role in plasma modeling, facilitating the comprehension of plasma behavior, characteristics, and dynamics in diverse domains, such as astrophysics, fusion research, the semiconductor industry, etc. In the available literature, there is a notable scarcity of, or even a complete absence of, these cross sections. Hence, in the present work, electron impact excitation cross sections are calculated for the transitions from the fine structure resolved energy levels of the configurations 4s2 and 4s4p to the fine structure resolved energy levels of the configurations 4s4p, 4s5s, 4p2 and 4s4d of the singly charged Ga ion (Ga+) using the relativistic distorted wave approximation theory with the target states represented by multi configurational Dirac Fock wavefunctions. The cross sections are calculated for projectile electron energy varying from threshold to 500 eV. Furthermore, the electron impact excitation rate coefficients for all the transitions under investigation are also calculated for electron temperatures ranging from 0.5 to 5 eV. In addition, analytic fitting of the rate coefficients is also performed, providing a practical resource for directly utilizing in plasma modeling applications.

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