Electron–interface-phonon interaction strength in Pöschl–Teller quantum wells is enhanced considerably compared to rectangular ones

Huong, Luong Thi; Phong, Tran Cong; Minh, Le Ngoc; Hien, Nguyen Dinh

doi:10.1016/j.vacuum.2023.112807

Vacuum

2024

DOI: 10.1016/j.vacuum.2023.112807

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Electron–interface-phonon interaction strength in Pöschl–Teller quantum wells is enhanced considerably compared to rectangular ones

Luong Thi Huong,

Tran Cong Phong,

Le Ngoc Minh

et al.

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Electron–interface-phonon interaction strength in Pöschl–Teller quantum wells is enhanced considerably compared to rectangular ones

Cited by 5 publications

References 64 publications

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Effect of gate voltage on Kerr nonlinearity in a dielectric slab doped with InAs/GaAs double-quantum-dot molecules

Comparison of Razavy and Pöschl -Teller confined potentials on the opto-electronic properties in a ZnSe/CdSe/ZnSe quantum well

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