Electron–phonon interaction in double quantum wells

Abstract

The experimental results for the magneto‐transport in the InGaAs/InAlAs double quantum wells (DQW) structures of two different shapes of wells and different value of the electron density obtained in pulse magnetic fields are reported. The Magnetophonon Resonance (MPR) was observed for both types of the structures at 77‐125 K temperatures. Four kinds of LO‐phonons are taken into account to interpret the MPR oscillations in DQW and a method of the Landau Level calculation in DQW is elaborated for this aim. The particularity of MPR in DQW is the great number of Landau levels caused by SAS‐splitting of electron states and great number of the phonon assistance electron transitions between Landau levels. The significant role of carriers statistics is shown too. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)