Electron radiation impact on the kink effect in S ₂₂ of InP-based high electron mobility transistors

Abstract

In this paper, the effect of 1 MeV electron radiation on the kink effect in S 22 of InP-based high electron mobility transistors (HEMTs) has been comprehensively analyzed. The radiated fluence is varied among 1 × 10 14 cm −2 , 1 × 10 15 cm −2 and 1 × 10 16 cm −2 . The size change of the kink effect before and after radiation is expressed by self-normalization and standard deviation. The results show that the kink effect appears at 36 GHz and becomes distinct in the sub-threshold region. The non-monotonous trend of the S 22 curve caused by the kink effect increases as the fluence increases. The dual-feedback circuit methodology is adopted to explain the influence of electron radiation on the kink effect; moreover, the change of transconductance and gate capacitance is the main reason for the influence of electron radiation on the kink effect in S 22 . This research will provide theoretical guidance for InP-based HEMTs to be used in space radiation applications.

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

“…In the past, the small-signal equivalent circuit model of InP HEMTs is established on the basis of device measurement. [9][10][11] When using the measured S-parameters to extract the equivalent circuit, there appears a problem that the unknown parameters in the circuit model are more than the number of equations provided by the experimental data. [12] In order to avoid this problem, a numerical optimization algorithm is used to extract the extrinsic parasitic parameters.…”