Electron-spin relaxation in p-type quantum wells via the electron-hole exchange interaction:The effects of the valence-band spin mixing and of an applied longitudinal electric field

Maialle, M. Z.; Degani, Marcos H.

doi:10.1103/physrevb.55.13771

Cited by 25 publications

(18 citation statements)

References 10 publications

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“…The spin relaxation rate due to the Bir-Aronov-Pikus mechanism is usually calculated via Eq. (66), which actually implies the elastic scattering approximation [118,390,390,391]. Recently Zhou and Wu [109] reinvestigated the Bir-Aronov-Pikus spin relaxation without such an approximation from the fully microscopic kinetic spin Bloch equation approach [44,334,350].…”

Section: Bir-aronov-pikus Mechanismmentioning

confidence: 97%

Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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Section: Bir-aronov-pikus Mechanismmentioning

confidence: 97%

Spin dynamics in semiconductors

2010

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“…III.D.1. Model calculations of Bir-Aronov-Pikus processes for electrons in p-doped bulk and quantum wells were performed by Maialle (1996;Maialle and Degani, 1997).…”

Section: Bir-aronov-pikus Mechanismmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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“…The spin-relaxation time of photogenerated electrons in p-doped QW's has been calculated by Maialle and Degani (Ref. [34]). They have found that, for the mechanism of exchange interaction, the spin mixing of the valence hole is not important due to a compensation between the enlargement of the hole density of states and a spin-mixing induced decrease in the exchange strength.…”

Section: Spin Dynamics Of An Optically Pumped Electron Gasmentioning

confidence: 99%

“…Fewer investigations deal with the spin flip of individual electrons and holes in 2D systems [16,17,[24][25][26]. Extensive theoretical studies have been also done on the spin-flip relaxation of excitons [27][28][29][30] and free carriers [31][32][33][34].…”

Section: Vinamentioning

confidence: 99%

Ultrafast Processes in Semiconductor Structures

Viña

1999

Acta Phys. Pol. A

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We review the dynamics of some of the more relevant optical processes in semiconductor quantum wells. We concentrate on the linear regime and study the time evolution of the light emission, using time-resolved photoluminescence spectroscopy. In intrinsic materials, excitonic effects determine their optical properties. Here we describe the formation and recombination of excitons, and the dependence of these processes on lattice temperature, exciton density, and energy of the excitation light pulses. We also describe the dynamics of the exciton's spin by optical orientation experiments. We discuss the principal mechanisms responsible for the spin flip of the excitons and clarify the role of the exciton localization. Finally, we will show that exciton-exciton interaction produces a breaking of the spin degeneracy in two-dimensional semiconductors. In doped quantum wells, we show that the two spin components of an optically created two-dimensional electron gas are well described by the Fermi-Dirac distributions with a common temperature but different chemical potentials. The rate of the spin depolarization of the electron gas is found to be independent of the mean electron kinetic energy but accelerated by thermal spreading of the carriers.

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Electron-spin relaxation in p-type quantum wells via the electron-hole exchange interaction:The effects of the valence-band spin mixing and of an applied longitudinal electric field

Cited by 25 publications

References 10 publications

Spin dynamics in semiconductors

Spin dynamics in semiconductors

Spintronics: Fundamentals and applications

Ultrafast Processes in Semiconductor Structures

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