Electron transport in InGaAs/AlInAs heterostructures and its impact on transistor performance

Abstract

We have studied electron transport in a variety of doped and modulation-doped InGaAs/AlInAs quantum wells within the context of field-effect transistor performance. Both quantum-well width and doping profile were varied with all layers lattice matched to the InP substrate. Electron transport properties in the structures were characterized using Hall, geometric magnetoresistance, and microwave velocity-field measurements, and transistor performance in terms of transconductance and channel current in 1.8- and 0.5-μm gate-length devices. Transconductances in 0.5-μm gate-length transistors were as high as 590 mS/mm and were more directly correlated to the peak electron velocity than to the low-field mobility.

Terahertz sources based on intracavity frequency mixing in mid-infrared quantum cascade lasers with passive nonlinear sections

“…Smallerthan-expected electron concentrations in Ga 0.47 In 0.53 As/ Al 0.48 In 0.52 As/ InP heterostructures, modulation doped in Al 0.48 In 0.52 As barriers, were previously observed and the effect has been attributed to deep electron trapping centers in Si-doped Al 0.48 In 0.52 As. [12][13][14] We note that we have recently observed similar smaller-than-expected losses in our nonlinear QCLs designed for second-harmonic generation. 15 Given the maximum output power of the pumps shown in Fig.…”

THz quantum cascade sources based on intra-cavity frequency mixing in passive nonlinear sections

“…smaller-than-expected doping in th partly due to designed transitions being slightly off-resonance w frequencies. Smaller-than-expected Ga 0.47 In 0.53 As/Al 0.48 In 0.52 As/InP modulation doping in Al 0.48 In 0.52 As observed [6][7][8] and the effect has been trapping centers in Si-doped Al 0.48 I we have recently observed simi losses in our nonlinear QCLs desig generation 9 .…”

An investigation on steep-slope and low-power nanowire FETs

“…The InGaAs-InAlAs quantum-well system is of considerable interest due to its suitability for high-speed transistor applications and for long-wavelength optoelectronic applications. The advantages of this material pair over others, such as the GaAsAlGaAs system, include higher electron mobilities, higher electron velocities and a larger conduction band discontinuity at the heterojunction [8], [9] interface. InGaAs/InAlAs high electron-mobility transistors (HEMTs) are attractive devices for high-speed, low-voltage power-amplifier applications.…”