Electron tunneling current in isotropic n[sup +]Poly-Si∕HfSiO[sub x]N∕Trap∕SiO[sub 2]∕p-Si capacitors: Effect of the depth and width traps and Si orientation

Noor, Fatimah A.; Khairiah,; Abdullah, Mikrajuddin; Khairurrijal, Khairurrijal

doi:10.1063/1.4820308

AIP Conference Proceedings

2013

DOI: 10.1063/1.4820308

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Electron tunneling current in isotropic n[sup +]Poly-Si∕HfSiO[sub x]N∕Trap∕SiO[sub 2]∕p-Si capacitors: Effect of the depth and width traps and Si orientation

Fatimah A. Noor¹,

Khairiah Khairiah²,

Mikrajuddin Abdullah³

et al.

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Electron tunneling current in isotropic n[sup +]Poly-Si∕HfSiO[sub x]N∕Trap∕SiO[sub 2]∕p-Si capacitors: Effect of the depth and width traps and Si orientation

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