One-dimensional (1D) metal±semiconductor (M/S) heterojunctions with ohmic current±voltage (I±V) characteristics are important to nanodevices because of their necessity in interconnection and packaging. However, it is often the case that Schottky, not ohmic contacts, occur in 1D M/S heterojunctions. [1][2][3][4] In our experiments, we have synthesized arrays of 1D heterojunctions of Ag nanowires (AgNWs) and amorphous carbon nanotubes (a-CNTs), using an approach developed in our group. [5,6] In the 1D heterojunctions, the a-CNTs are contacted ohmically by the AgNWs. This is based on general characteristics of the electronic structure of amorphous semiconductors, which cause contacts between metals and most amorphous semiconductors to be ohmic. [7,8] Therefore, if 1D amorphous semiconductor materials are used as intermediates in interconnection and packaging, a basis can be established for designing ohmic contacts in nanodevices by using a variety of materials.Figures 1a,b show scanning electron microscopy (SEM) images of the cross-section and the top view, respectively, of an AgNW/a-CNT heterojunction array in an anodic aluminum oxide (AAO) template. The AgNW and the a-CNT parts are about 7.2 lm and 32.7 lm in length, respectively. The a-CNTs could be made to protrude from the AAO template, as shown in Figure 1b, only after the AAO template surface had been etched slightly. Their diameters were 40±64 nm, with a dominant value of 51±5 nm (about 80 % were in this range). Figure 2a shows a transmission electron microscopy (TEM) image of a heterojunction node. Its corresponding electron diffraction pattern and high-resolution TEM (HRTEM) image are shown in Figures 2b,c, respectively. In Figure 2b, in addition to single-crystal diffraction spots indexed as face-centered cubic Ag (fcc(Ag)), some faint rings and arcs exist that are too weak to be printed. These come from the amorphous part of the structure, which consists of many disordered tiny carbon clusters, as shown in the CNT part of Figure 2c. It is clear that each heterojunction consists of a single-crystal AgNW and an a-CNT that is composed of many tiny carbon clusters. The amorphous nature of the latter is due to its growth mechanism, which is based on self-catalytic functions of the AAO channels. [9] A resistance±temperature (R±T) curve and a C1s core-level X-ray photoelectron spectroscopy (XPS) spectrum from two arrays containing only a-CNTs are shown in Figures 3a,b, respectively. The R±T curve was acquired by using two electrical probes which were attached to the bottom and top surfaces of the AAO templateÐwhich contained a-CNTsÐusing evaporated Ag films. This method is similar to that described by Heremans et al. [10] From the R±T curve, it can be seen that the resistance increases gradually with decreasing temperature, which is one of the characteristics of semiconductors. Additionally, considering the amorphous nature of our aCNTs, they could be further classified as amorphous semiconductors. The XPS spectrum indicates that the a-CNTs have an sp 2 fractio...