Electronic structure and optical properties of graphene/stanene heterobilayer

Abstract

The structural, electronic and optical properties of the graphene hybrid with stanene, the tin counterpart of graphene, are investigated by means of density functional calculation with the observation of band gap opening and enhanced visible light response. The lattice mismatch between graphene and stanene is taken into consideration and several stacking methods for model construction are proposed to study the possible effects. The Dirac feature can be observed in this bilayer system with relatively stronger interlayer interaction than weak van der Waals forces, which is ascribed to the unsaturated p orbital of stanene. Despite the mutual semi-metal nature of graphene and stanene, it is significant to note a band gap opening and the electrical neutrality of the bilayer. The combination of high carrier mobility of graphene and the excellent spin Hall effect of stanene is expected to coexist in the bilayer structure. In addition, we found that the stanene monolayer has a relatively lower work function than graphene and more importantly, it exhibits more pronounced optical absorption than graphene. The results indicate that a graphene/stanene heterobilayer will facilitate the performance of stanene related spintronic devices and is therefore a good candidate for photoelectronic devices.

Structural and electronic properties of Stanene-BeO heterobilayer

“…In theoretical work, Garg et al [17] reported the bandgap opening in monolayer stanene induced by B-N doping. Similarly, Chen et al [18] also found a bandgap opening of ∼77 meV for the graphene/stanene heterobilayer. Thus, for exploiting the excellent properties of stanene, it becomes imperative for researchers to find an appropriate substrate which not only achieves tunable bandgap but at the same time maintains stanene's intrinsic properties.…”

Design of graphene-like gallium nitride and WS2/WSe2 nanocomposites for photocatalyst applications

“…Nevertheless, it is remarkable to find a overall enhancement of the absorption intensity in the GaN/WSe2 composites. As have been demonstrated in many pervious researches, the interlayer coupling can induce new interband transitions that lead to the evolution of the optical properties [52][53][54].…”

Band gap opening in stanene induced by patterned B–N doping

“…5,16 Thus, stanene has a great potential for photo-related applications than graphene. 87 Moreover, achieving ultra-low 21 work function in graphene is very important for electronics and electron emission devices. [89][90][91] As stanene and doped stanene have lower work function than graphene, they can be promising for electronic device technologies.…”