Electronic transport and device application of crystalline graphitic carbon nitride film

TiO2/graphitic carbon nitride nanosheet composite with enhanced sensitivity to atmospheric water

“…In contrast, delocalized hopping occurs more easily along stacks of sheets, leading to a higher current on the mA range for the out of plane direction. 17,21 The electrical properties reported herein for TiO 2 /CNNS and CNNS pellets are likely dominated by conduction across the plane, because the graphitic layers were uniaxially pressed to be parallel to others prior to gold sputtering on the opposite faces of the pellet.…”

“…Using geometrical surface area of each specimen, the current density is 34.7(2) mA cm −2 for TiO 2 /CNNS and 32.7(4) mA cm −2 for CNNS. Recently, Urakami et al 16,17 reported the direct current on the order of pA (in plane) vs. mA (out of plane) in g-C 3 N 4 thin lms. It was explained that carriers are conned around the N atom for the in-plane direction, leading to low conductivity in the pA range.…”

“…5 for TiO 2 /CNNS. Firstly, the transport at the bulk (I) should be minimal (due to the highly insulating nature 15,18,22,33 ) and concentrated mostly in the direction perpendicular to the sheet (i.e., out of plane) 16,17,21 as discussed in the I-V results. On the other hand, the transport along the grain boundary (II) and on the open pores surfaces (III) is possible considering that the samples were simply pressed into pellet, leaving residual porosities.…”

“…While the electronics properties of g-C 3 N 4 -based materials are widely investigated, the fundamentals of their electrical properties are less well known, contrasting with closely related materials such as amorphous carbon 10 or amorphous carbon nitride. [11][12][13] The studies on g-C 3 N 4 and/or CNNS focus on thin lm devices [14][15][16][17][18][19][20] including diode, double dielectric, metalinsulator-semiconductor, typically prepared by sophisticated vacuum techniques. It is known that the electrical conductivity of g-C 3 N 4 along the basal plane (i.e.…”

Thermal chemical vapor deposition of layered carbon nitride films under a hydrogen gas atmosphere

“…8 In addition, carrier transport and electronic device applications in highly ordered crystalline films have been demonstrated. [9][10][11][12] Moreover, the development of the piezoelectric effect has been demonstrated by employing an in-plane crystal structure with a low inversion symmetry. 13,14 Therefore, g-C 3 N 4 films have been considered for developing novel optoelectronic devices.…”