Electronically tunable MOSFET-only current-mode biquad filter

Yeşil, Abdullah; Ozenli, Deniz; Arslan, Emre; Kaçar, Fırat

doi:10.1016/j.aeue.2017.07.019

Cited by 13 publications

(15 citation statements)

References 28 publications

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“…In this paper, IRN is preferred instead of output noise so that it can be performed a fair comparison among the presented filters. In the literature, these papers [17,18,[26][27][28][29][30][31]…”

Section: Proposed Circuitmentioning

confidence: 99%

“…Table 5 summarises the significant performance parameters of the proposed filters. The main properties of the high-order filters, MOSFET-only filters, and TAM filters in [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] and the proposed ones are summarised in Table 6 (see the Appendix for details).…”

Section: Proposed Circuitmentioning

confidence: 99%

“…In the literature, biquad filter [14][15][16][17][18][19] employing only MOSFET parameter such as transconductance and gate to source capacitance has been presented. References [14,15] proposed CM LPF and BPF consisting of only two transistors in the core structure.…”

Section: Introductionmentioning

confidence: 99%

“…In the work of Toker , et al [20], three CCIIs and four passive elements are used to design TAM filter implementing LP, BP and HP outputs. Yesil and Kacar [21] proposed VM and TAM filter employing two voltage differencing transconductance amplifiers and two capacitors. Shah , et al [22] presented TAM filter realising LP and BP output including a single operational amplifier, two resistors and a single capacitor.…”

Section: Introductionmentioning

confidence: 99%

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High‐order realisation of MOSFET‐only band‐pass filters for RF applications

Yeşil¹,

Mınaeı

2018

IET Circuits, Devices & Systems

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The authors present two new metal oxide semiconductor field effect transistor (MOSFET)-only second-order voltage and transadmittance-mode band-pass filters (BPFs) employing only five transistors without using any passive elements such as a resistor, a capacitor, and an inductor. As a result, both proposed circuits possess low-power consumption and occupy small chip area. The first proposed filter enjoys low output impedance and offset cancellation for voltage-mode operation while the second proposed filter has low supply voltage. The centre frequency of both proposed filters can be electronically tuned by varying biasing voltage. To demonstrate the performance of the proposed filters, effects of output transconductance of transistors have been investigated and equations of input referred noise have been obtained. Furthermore, fourth-order voltage and transadmittance-mode BPF which is derived the first proposed filter is presented and its simulation results are given. All proposed filters are laid-out in the Cadence environment using Taiwan semiconductor manufacturing company (TSMC) 0.18 µm complementary metal oxide semiconductor (CMOS) technology parameters. The required chip area of the fourth-order voltage and transadmittance-mode band-pass filter is 1100 μm 2 and the power consumption is about 436 µW.

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Section: Proposed Circuitmentioning

confidence: 99%

Section: Proposed Circuitmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High‐order realisation of MOSFET‐only band‐pass filters for RF applications

Yeşil¹,

Mınaeı

2018

IET Circuits, Devices & Systems

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“…For the research, infrastructure of the SIX Center was used. output (MISO) filters [4], [5]. It is also possible to come across the so called single-input single-output filters [6], but manual modification of the internal topology is necessary in this case.…”

Section: Introductionmentioning

confidence: 99%

Novel Reconnection-Less Reconfigurable Filter Design Based on Unknown Nodal Voltages Method and Its Fractional-Order Counterpart

Langhammer¹,

Šotner²,

Dvořák³

et al. 2019

ElAEE

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A novel solution of reconnection-less electronically reconfigurable filter is introduced in the paper. The filter is designed based on unknown nodal voltages method (MUNV) using operational transconductance amplifiers (OTAs) and variable gain amplifier (VGA). The structure can provide all-pass, band-stop, high-pass 2nd order functions, high-pass function of the 1st order and direct transfer from the same topology without requirement of manual reconnection. The proposed structure also offers the electronic control of the pole frequency. Moreover, fractional-order design of the proposed filter is also provided. The behaviour is verified by simulations using Cadence IC6 (spectre) software.

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A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

Ozenli

Yeşil

Kuntman

2021

Circuit Theory & Apps

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Summary In this work, a novel current‐mode filter is presented including a PMOS grounded capacitor and a metal insulator metal structure (MIM‐cap). Proposed filter's cut‐off frequency can be easily adjusted from 10 up to 35 MHz. The wide tuning range of the proposed filter is designed to cover the need of baseband filter in the high‐frequency band and wireless applications such as CDMA, IEEE802.11a/g, IEEE 802.11b, and IEEE 802.11n. In addition, the proposed filter is designed by using a design methodology employing polynomial regressive models of small signal parameters of transistors to provide design accuracy as high as possible. Designed filter structure has layout with 52.1 μm × 62.6 μm chip area, and post‐layout simulations are given extensively to prove performance of the filter. Furthermore, 1‐dB compression point and IIP3 analyses are highlighted to observe linearity of band‐pass output of the filter structure. Also, input‐referred noise characteristics of the filter outputs are investigated to overcome thermal noise effects worsening the performance for a wide range of operating frequency interval. Provided results show that the proposed filter scheme brings a promising opportunity to designers for the high‐frequency region operations.

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Electronically tunable MOSFET-only current-mode biquad filter

Cited by 13 publications

References 28 publications

High‐order realisation of MOSFET‐only band‐pass filters for RF applications

High‐order realisation of MOSFET‐only band‐pass filters for RF applications

Novel Reconnection-Less Reconfigurable Filter Design Based on Unknown Nodal Voltages Method and Its Fractional-Order Counterpart

A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

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