Electronics reliability assessment of future power fusion machines: Neutron interaction analysis in bulk silicon

Autran, Jean‐Luc; Munteanu, Daniéla

doi:10.1016/j.microrel.2021.114223

Cited by 2 publications

(1 citation statement)

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“…Within the scope of current research endeavors, calculations of reaction rates and the classification of secondary elements and particles are actively conducted utilizing the Geant4 software environment and Jendl cross-section libraries [16][17][18][19]. These refined analytical methods enable us to delve deeper into the impact of the neutron flux on semiconductors, refining the dynamics of reactions under various conditions.…”

Section: Introductionmentioning

confidence: 99%

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures

Klochkov,

Yskakov,

Vinichenko

et al. 2023

Materials

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The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 1014 cm−2 ÷ 1.2 × 1016 cm−2. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications.

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Section: Introductionmentioning

confidence: 99%