Electronics Structure of Monochalcogenide Materials MX (M = Ge, Sn and Pb; X = S and Se) Buckled Square Lattice

Hendrawan, Juhri; Absor, Moh. Adhib Ulil; Arifin, Muhammad; Jihad, Ibnu; Abraha, Kamsul

doi:10.1088/1757-899x/515/1/012105

Cited by 4 publications

(5 citation statements)

References 8 publications

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“…The optimized structure and the related parameters, are summarized in Table 1 and have good agreement with previous report [9]. The PbS and PbSe calculations have been presented to confirm the computational results with previously reported data [8].…”

Section: ■ Results and Discussionsupporting

confidence: 86%

“…The band gap energy of all MX buckled square lattice monolayer has an indirect type. These calculated values are different from black phosphorene structure [9]. However, both structures have typical pattern in the band gap properties.…”

Section: ■ Results and Discussioncontrasting

confidence: 71%

“…Here, the breaking of inversion symmetry in the hexagonal crystal, together with the strong SOC of transition metal atom leads to the strong SOC splitting. Recently, the 2D Group-IV monochalcogenides in square lattice with black phosphorus structure have been recently studied and proved as a suitable semiconductor with sizeable Rashba splitting [9].…”

Section: ■ Introductionmentioning

confidence: 99%

“…Computational research on buckled square lattice of lead chalcogenides showing significant first-order Rashba effect in this structure [8]. Previously, a preliminary study on the electronic structure of the MX monochalcogenides (M = Ge, Sn and X = S, Se) has been conducted with buckled squared lattice and also the calculation of Rashba splitting size up to the-third order correction that was showing a sizeable Rashba splitting in these materials [9]. This work showed that the Rashba splitting is also observed in the MTe monochalcogenides (M = Ge, Sn) with buckled squared lattice as additional materials to MX monochalcogenides (M = Ge, Sn and X = S, Se) buckled square lattice.…”

Section: ■ Introductionmentioning

confidence: 99%

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Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

et al. 2020

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The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Γ and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device.

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Section: ■ Results and Discussionsupporting

confidence: 86%

Section: ■ Results and Discussioncontrasting

confidence: 71%

Section: ■ Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

et al. 2020

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“…The in plane piezoelectric stress coefficient (e 21 ) is 1.38 × 10 −10 C m −1 for puckered BiSb (p-BiSb) monolayer [61]. Hendrawan et al [62] studied the buckled square lattice of MX (M = Ge, Sn and Pb; X = S and Se) monolayers and found that they possess RSS at M and Γ points with an α R of ∼5 eV Å for monolayers containing Pb atom. Li et al [63] investigated the RSS in g-TlA (A = N, P, As, and Sb) monolayers.…”

Section: Px (X = As Sb and Bi) Monolayersmentioning

confidence: 99%

Insights into selected 2D piezo Rashba semiconductors for self-powered flexible piezo spintronics: material to contact properties

Mohanta

Sarkar³

2023

J. Phys.: Condens. Matter

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The new paradigm in electronics consists in realizing the seamless integration of many properties latent in nanomaterials, such as mechanical flexibility, strong spin-orbit coupling (Rashba spin splitting - RSS), and piezoelectricity. Taking cues from the pointers given on 1D ZnO nanowires [ACS Nano 2018, 12, 1811−1820], the concept can be extended to multifunctional 2D materials, which can serve as an ideal platform in next-generation electronics such as self-powered flexible piezo-spintronic device. However, a microscopically clear understanding reachable from the state-of-the-art density functional theory-based approaches is a prerequisite to advancing this research domain. Atomic-scale insights gained from meticulously performed scientific computations can firmly anchor the growth of this important research field, and that is of undeniable relevance from scientific and technological outlooks. This article reviews the scientific progress in understanding 2D materials hosting all the essential properties, i.e., flexibility, piezoelectricity, and RSS. Important 2D semiconducting monolayers that deserve a special mention, include monolayers of buckled MgX (X=S, Se, Te), CdTe, ZnTe, Janus structures of transition metal trichalcogenides, Janus tellurene and 2D perovskites. van der Waals multilayers are also built to design multifunctional materials via modulation of the stacking sequence and interlayer coupling between the constituent layers. External electric field, strain engineering and charge doping are perturbations mainly used to tune the spintronic properties. Finally, the contact properties of these monolayers are also crucial for their actual implementation in electronic devices. The nature of the contacts, Schottky/Ohmic, needs to be carefully examined first as it controls the device's performance. In this regard, the rare occurrence of Ohmic contact in graphene/MgS van der Waals hetero bilayer has been presented in this review article.

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Recent Advances in SnSe Nanostructures beyond Thermoelectricity

Wang

Huang

et al. 2022

Adv Funct Materials

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Layered SnSe is an emerging class of black phosphorus, which is non-toxic, eco-friendly, and chemically stable. Recently, SnSe nanostructures have triggered more research interest and enabled broad applications beyond demonstrating their great performances on thermoelectricity. However, there are also a great many significant studies of SnSe nanostructures beyond thermoelectricity. SnSe quantum dots, nanosheets, nanowires, and thin films with diverse morphologies have been synthesized using various chemical and physical preparation approaches. SnSe is a multi-phase semiconductor, and its nanostructures endow unique properties, including small electron effective mass, ultralow thermal conductivity, huge anisotropy, and the largest 2D piezoelectric coefficient ever predicted. The versatility of SnSe nanostructures can enable potential applications ranging from ultrafast photonics, logic devices, photodetectors, solar cells, photocatalysis, energy storage, and biology to more cutting-edge interdisciplinary subjects. In this review, the recent advances made in SnSe nanostructures are summarized, covering basics, synthesis, properties, and applications, just giving a passing comment on thermoelectricity. An in-depth perspective on the challenges and prospects of SnSe nanostructures toward broad and practical applications is also given.

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Electronics Structure of Monochalcogenide Materials MX (M = Ge, Sn and Pb; X = S and Se) Buckled Square Lattice

Cited by 4 publications

References 8 publications

Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method

Insights into selected 2D piezo Rashba semiconductors for self-powered flexible piezo spintronics: material to contact properties

Recent Advances in SnSe Nanostructures beyond Thermoelectricity

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