Asia and South Pacific Conference on Design Automation, 2006.
DOI: 10.1109/aspdac.2006.1594686
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Electrothermal engineering in the nanometer era: from devices and interconnects to circuits and systems

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Cited by 3 publications
(8 citation statements)
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“…High temperatures can cause reliability problems in a VLSI circuit since they exacerbate electromigration in metal wires [7], hot-carrier effects in transistors, and thermal-stress-related gateoxide breakdown in transistors [8]. These problems get more severe with transistor scaling.…”
Section: Impact Of Elevated Temperatures On Circuit Performance Mmentioning
confidence: 99%
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“…High temperatures can cause reliability problems in a VLSI circuit since they exacerbate electromigration in metal wires [7], hot-carrier effects in transistors, and thermal-stress-related gateoxide breakdown in transistors [8]. These problems get more severe with transistor scaling.…”
Section: Impact Of Elevated Temperatures On Circuit Performance Mmentioning
confidence: 99%
“…Temperature-related failures currently account for more than 50% of all IC failures [4]. Thermal issues will have a much greater impact on the reliability and performance of ICs in future nanometer CMOS technologies due to increasing variability of key process parameters [8].…”
Section: Impact Of Elevated Temperatures On Circuit Performance Mmentioning
confidence: 99%
“…An MWCNT consists of several shells. The number of shells is determined by D outer , which is based on (2). Each shell has its own d i , λ, andÑ chan/shell , which can be derived from D outer .…”
Section: Conductance Of Mixed Cnt Bundlementioning
confidence: 99%
“…In order to use the mixed CNT bundles, models that can accurately characterize their behaviors need to be created. Several SWCNT resistance or conductance models have been proposed in the literature [2]- [6]. However, the MWCNT models that are important for analyzing mixed CNT bundles are not fully explored.…”
Section: Introductionmentioning
confidence: 99%
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