Electrotunable artificial molecules based on van der Waals heterostructures

Zhang, Zhuo‐Zhi; Song, Xiang‐Xiang; Luo, Gang; Deng, Guangwei; Mosallanejad, Vahid; Taniguchi, Takashi; Watanabe, Kenji; Li, Hai-Ou; Cao, Gang; Guo, Guang‐Can; Nori, Franco; Guo, Guo-Ping

doi:10.1126/sciadv.1701699

Cited by 60 publications

(68 citation statements)

References 58 publications

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“…1c is a double quantum dot (DQD) to form two spin-1/2 qubits and the lower half is a single quantum dot (SQD) acting as a charge sensor to measure the charge states of the DQD, which is also called a single electron transistor (SET). In fact, quantum dots can be formed in various systems, including GaAs/AlGaAs heterostructures [ 21 ], silicon metal–oxide–semiconductor (MOS) and silicon-on-insulator (SOI) [ 22 ], nanowires [ 23 ], nanotubes [ 24 ], graphene [ 25 ], van der Waals heterostructures [ 26 , 27 ], and self-assembled crystals [ 28 ]. It is worth mentioning that quantum dots based on Si/SiO 2 and SOI technology are both CMOS compatible and in this article we denote the former as silicon MOS and the latter as SOI for clarity.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor quantum computation

Zhang

Cao

et al. 2018

National Science Review

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150

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Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In the last decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed. The researches vary from initialization, control and readout of qubits, to the architecture of fault tolerant quantum computing. Here, we first introduce the basic ideas for quantum computing, and then discuss the developments of single-and twoqubit gate control in semiconductor. Till now, the qubit initialization, control and readout can be realized with relatively high fidelity and a programmable two-qubit quantum processor was even demonstrated. However, to further improve the qubit quality and scale it up, there are still some challenges to resolve such as the improvement of readout method, material development and scalable designs. We discuss these issues and introduce the forefronts of progress. Finally, considering the positive trend of the research on semiconductor quantum devices and recent theoretical work on the applications of quantum computation, we anticipate that semiconductor quantum computation may develop fast and will have a huge impact on our lives in the near future.

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Section: Introductionmentioning

confidence: 99%

Semiconductor quantum computation

Zhang

Cao

et al. 2018

National Science Review

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150

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“…An all two-dimensional (2D) architecture involving vertical integration of van der Waals (vW) materials has been explored as a platform for the future semiconductor technology 1 – 3 . Hybrid devices consisting of physically stacked layers of MoS 2 and other vW materials has also been explored for various device applications; MoS 2 /Graphene interfaces for improved electrical contacts 4 , 5 , MoS 2 /h-BN hybrid systems for mobility engineering 3 , 5 and electrostatic confinement 6 – 8 , MoS 2 /WSe 2 PN-junction devices 2 have been reported. Rather than stacking, a lateral monolithic integration of regions with different electrical properties while preserving the two-dimensionality is an important ingredient for future microelectronics technology.…”

Section: Introductionmentioning

confidence: 99%

Stable and scalable 1T MoS2 with low temperature-coefficient of resistance

Sharma

Surendran

Varghese

et al. 2018

Sci Rep

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Monolithic realization of metallic 1T and semiconducting 2H phases makes MoS2 a potential candidate for future microelectronic circuits. A method for engineering a stable 1T phase from the 2H phase in a scalable manner and an in-depth electrical characterization of the 1T phase is wanting at large. Here we demonstrate a controllable and scalable 2H to 1T phase engineering technique for MoS2 using microwave plasma. Our method allows lithographically defining 1T regions on a 2H sample. The 1T samples show excellent temporal and thermal stability making it suitable for standard device fabrication techniques. We conduct both two-probe and four-probe electrical transport measurements on devices with back-gated field effect transistor geometry in a temperature range of 4 K to 300 K. The 1T samples exhibit Ohmic current-voltage characteristics in all temperature ranges without any dependence to the gate voltage, a signature of a metallic state. The sheet resistance of our 1T MoS2 sample is considerably lower and the carrier concentration is a few orders of magnitude higher than that of the 2H samples. In addition, our samples show negligible temperature dependence of resistance from 4 K to 300 K ruling out any hoping mediated or activated electrical transport.

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“…After cooling to 4 K, the devices were illuminated using a 660 nm light-emitting diode to reduce defect-related impurity traps and improve the carrier homogeneity. All subsequent measurements are performed with the light emitting diode turned off 14,20 . Figure 2 shows the transport properties of devices D1 and D2.…”

Section: Resultsmentioning

confidence: 99%

Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

Lau

Chee

Thian

et al. 2019

Sci Rep

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We report transport measurements of dual gated MoS 2 and WSe 2 devices using atomic layer deposition grown Al 2 O 3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.

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Electrotunable artificial molecules based on van der Waals heterostructures

Abstract: Electrically controlled evolution from an artificial molecule to an artificial atom in atomically thin MoS2 is demonstrated.

Cited by 60 publications

References 58 publications

Semiconductor quantum computation

Semiconductor quantum computation

Stable and scalable 1T MoS2 with low temperature-coefficient of resistance

Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

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