Emerging SiC Applications beyond Power Electronic Devices

Abstract

In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property

“…It has a honeycomb structure, similar to graphene 48 . The unique properties of the layered SiC have drawn significant interest in device application 50 . Higher break-down field, mechanical strength, as well as in-plane stiffness have made the material an appealing candidate for TFET application 51 – 53 .…”