Emission microscopy and related techniques: Resolution in photoelectron microscopy, low energy electron microscopy and mirror electron microscopy

Rempfer, Gertrude F.; Griffith, O. Hayes

doi:10.1016/0304-3991(92)90184-l

Cited by 60 publications

(44 citation statements)

References 20 publications

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“…For the resolutions employed in the study of droplet trails and with C S values derived by Rempfer & Griffith (1992), we have found that including spherical aberration provides less than a 1 per cent change in the simulated intensity variation. However, we anticipate that the inclusion of spherical aberration will be of benefit in simulating higher resolution images of surface objects within the domain of validity of Laplacian imaging.…”

Section: Extensions Of the Laplacian Imaging Theory Of Mirror Electromentioning

confidence: 99%

“…In particular, Laplacian contrast is also known as out of focus contrast in TEM of thin specimens (Lynch et al 1975; , and we can use this formalism to include the effects of spherical and chromatic aberration. These aberrations are an intrinsic part of an MEM imaging system and limit resolution (Rempfer & Griffith 1992). Since a Laplacian contrast interpretation is applicable to imaging objects at high resolution provided |V 2 ⊥ H B | 1, it is important to incorporate such effects into the imaging theory.…”

Section: Extensions Of the Laplacian Imaging Theory Of Mirror Electromentioning

confidence: 99%

“…The effect of the anode aperture is incorporated by assuming that the uniform field is terminated by an ideal diverging lens (Grant & Phillips 1990;Rempfer & Griffith 1992;Nepijko & Sedov 1997), as shown in figure 2. The virtual specimen created by the uniform field at z = 2L M is the object of the aperture lens with focal length f = −4L M .…”

Section: Geometrical Theory Of Mirror Electron Microscopy Contrastmentioning

confidence: 99%

“…This has stimulated significant efforts over the years to interpret MEM image contrast and extract quantitative information regarding the microfields and surface properties. Although a variety of approaches have been employed, including some based on wave mechanics (Hermans & Petterson 1970;Kennedy et al 2006), most have been based on geometrical ray-tracing techniques (Barnett & Nixon 1967b;Sedov 1970;Luk'yanov et al 1974;Someya & Kobayashi 1974;Bok 1978;Rempfer & Griffith 1992;Świȩch et al 1993;Godehardt 1995). Building on this latter work, a geometrical theory has been developed in which MEM contrast is viewed as a transverse redistribution of electron current density on an imaging screen due to shifts in electron trajectories following interaction with microfields just above the specimen surface (Sedov 1970;Dyukov et al 1991;Nepijko & Sedov 1997).…”

Section: Introductionmentioning

confidence: 99%

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Laplacian image contrast in mirror electron microscopy

et al. 2010

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We discuss an intuitive approach to interpreting mirror electron microscopy (MEM) images, whereby image contrast is primarily caused by the Laplacian of small height or potential variations across a sample surface. This variation is blurred slightly to account for the interaction of the electrons with the electrical potential away from the surface. The method is derived from the established geometrical theory of MEM contrast, and whilst it loses quantitative accuracy outside its domain of validity, it retains a simplicity that enables rapid interpretation of MEM images. A strong parallel exists between this method and out of focus contrast in transmission electron microscopy (TEM), which allows a number of extensions to be made, such as including the effects of spherical and chromatic aberration.

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Section: Extensions Of the Laplacian Imaging Theory Of Mirror Electromentioning

confidence: 99%

Section: Extensions Of the Laplacian Imaging Theory Of Mirror Electromentioning

confidence: 99%

Section: Geometrical Theory Of Mirror Electron Microscopy Contrastmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Laplacian image contrast in mirror electron microscopy

et al. 2010

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“…This very high electron yield is employed to produce the very high spatial resolution. Present photoelectron emission microscopes can achieve less than 10nm resolution imaging single electron events 10 . The high secondary ion yield, particularly the high secondary molecular ion yield, and the high ionization probability that HCI excitation produces offer the potential of providing highly sensitive compositional information at high spatial resolution.…”

Section: Introductionmentioning

confidence: 99%

Surface charge compensation for a highly charged ion emission microscope

et al. 2004

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A surface charge compensation electron flood gun has been added to the Lawrence Livermore National Laboratory (LLNL) highly charged ion (HCI) emission microscope. HCI surface interaction results in a significant charge residue being left on the surface of insulators and semiconductors. This residual charge causes undesirable aberrations in the microscope images and a reduction of the Time-Of-Flight (TOF) mass resolution when studying the surfaces of insulators and semiconductors. The benefits and problems associated with HCI microscopy and recent results of the electron flood gun enhanced HCI microscope are discussed.

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Imaging Localized Surface Plasmons by Femtosecond to Attosecond Time‐Resolved Photoelectron Emission Microscopy – “ATTO‐PEEM”

Chew

Pearce

Scheffold

et al. 2014

Attosecond Nanophysics

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The direct detection of the spatiotemporal dynamics of nanolocalized optical near-fields on nanostructured metal surfaces, for example, imaging of localized surface plasmons (cf. Chapter 1) on rough or nanostructured metal films or the imaging of propagating surface plasmon polaritons at a vacuum-metal or metal-dielectric interface is a prerequisite to further control and optimize surface-plasmon based ultrafast nanooptics for future device development and applications [1][2][3][4].While free electrons in metals collectively respond to excitation from a light pulse, which is resonant to the surface plasmon frequency of the system, and squeeze and amplify the field intensity of the incoming plane light field into a subwavelength spatial volume, the typically broad frequency bandwidth of surface plasmon resonances supports an ultrafast response of these fields with rapid field changes on sub-femtosecond time scales [5].The sub-wavelength nanoscaled localization of optical fields in the vicinity of metal nanostructures and the ultrafast temporal evolution of such fields on a 0.1-100 fs time scale require the invention and development of new experimental methodologies, which combine nanometer (sub-optical) spatial resolution, sub-femtosecond temporal resolution, and optionally further nanospectroscopic information.Resolving the spatial distribution of such fields requires a microscopic technique with sub-optical spatial resolution, for example, in the 10-100 nm range. Scanning near-field optical microscopy (SNOM) techniques have been successfully applied with spatial resolutions of about ∼100 nm; however, the combination with ultrashort light pulses is still very difficult. Photoemission electron microscopy (PEEM) is a technique capable of resolving the spatial emission distribution of photoelectrons with an ultimate resolution of ∼10 nm.

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Emission microscopy and related techniques: Resolution in photoelectron microscopy, low energy electron microscopy and mirror electron microscopy

Cited by 60 publications

References 20 publications

Laplacian image contrast in mirror electron microscopy

Laplacian image contrast in mirror electron microscopy

Surface charge compensation for a highly charged ion emission microscope

Imaging Localized Surface Plasmons by Femtosecond to Attosecond Time‐Resolved Photoelectron Emission Microscopy – “ATTO‐PEEM”

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