Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(311)B substrates

Caroff, Philippe; Bertru, Nicolas; Platz, Charly; Dehaese, Olivier; Corre, Alain Le; Loualiche, Slimane

doi:10.1016/j.jcrysgro.2004.09.031

Cited by 20 publications

(27 citation statements)

References 11 publications

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“…13(a)), different growth interrupts overpressure types viz. As, P and As and P, and the growth interrupt duration, on the Qdots emission [78]. A red shift (blue shift) in PL peak wavelength was observed on decreasing (increasing) the first cap thickness under As (P or As and P) which was discussed in terms of the compressive (tensile) stress experienced by InGaAsP first capping layer due to InAs (P-rich) surface as a result of alteration in the As/P exchange process.…”

Section: Qdots On (311)b Inp Substratementioning

confidence: 98%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Qdots On (311)b Inp Substratementioning

confidence: 98%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…4 for the laser peak (dashed line). However, as the emission wavelength is equal to 1.61 µm the growth of QD stacked layers should be further optimized to reach a laser emission closed to 1.55 µm (Platz et al 2005). In fig .4, the measured output light power is depicted in inset as a function of the current density.…”

Section: Electroluminescence Results Under Pulsed Excitationmentioning

confidence: 99%

“…It has been shown that growth on high index substrates such as (113)B, favors the achievement of a higher density of smaller QDs than on (100) InP substrates (Caroff et al 2005). In order to optimize laser performances, the "double cap" (DC) growth method (Paranthoen et al 2001) is used.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, based on laser structures containing such dots grown trough the DC procedure, a laser emission on the ground state (GS) has been first observed at room temperature under optical pumping . In order to replace the InP first cap layer by GaInAsP quaternary alloy with gap emission wavelength of 1.18 µm a new DC QD growth procedure has been recently proposed (Caroff et al 2005). As a result, QD laser structures also exhibit a laser emission but under electrical pumping (EP) at room temperature (Platz et al 2005).…”

Section: Introductionmentioning

confidence: 99%

“…In order to replace the InP first cap layer by GaInAsP quaternary alloy with gap emission wavelength of 1.18 µm a new DC QD growth procedure has been recently proposed (Caroff et al 2005). As a result, QD laser structures also exhibit a laser emission but under electrical pumping (EP) at room temperature (Platz et al 2005). The goal of this paper is devoted to present time-resolved photoluminescence (TRPL) and electroluminescence (EL) results recently obtained on InAs QDs structures grown on InP(113B).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Carrier Dynamics and Saturation Effect in (113)B InAs/InP Quantum Dot Lasers

et al. 2006

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Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

Zhou¹,

Piron²,

Dontabactouny³

et al. 2009

Phys. Status Solidi (c)

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International audienceInAs quantum dash and dot (QDH and QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The grown lasers with active zone containing multiple stacked layers exhibit lasing wavelength at 1.55 µm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties like gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD laser structures shows a promising potential for improvement of the laser properties

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Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(311)B substrates

Cited by 20 publications

References 11 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Carrier Dynamics and Saturation Effect in (113)B InAs/InP Quantum Dot Lasers

Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

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