Emitter thickness optimization for GaSb thermophotovoltaic cells grown by molecular beam epitaxy

Abdallah, Shaimaa A.; Herrera, Daniel J.; Conlon, Benjamin P.; Rahimi, Nassim; Lester, L. F.

doi:10.1117/12.2187487

Cited by 1 publication

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“…Research efforts towards maximizing the conversion efficiency have been drastically increased in recent years. Improvements in terms of spectral control [ 137 ], metal contact [ 138 , 139 , 140 , 141 , 142 ] as well as optimization on the layer thickness [ 51 , 92 , 117 ] and doping concentrations [ 50 , 51 , 143 , 144 ] are the major topics reported from various works.…”

Section: Gasb-based Tpv Cellmentioning

confidence: 99%

“…By decreasing the emitter depth, the quantum efficiency ( QE ) performance of the cell is increased while the

is decreased. On top of that, Shaimaa et al [ 92 ] emphasized the trade-off relation between the emitter thickness and the performance parameter, especially with the

and

values. In this regard, a thick p-doped emitter with a high doping concentration shall therefore decreases the minority carrier lifetime hence decreases the

value.…”

Section: Gasb-based Tpv Cellmentioning

confidence: 99%

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A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency.

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Section: Gasb-based Tpv Cellmentioning

confidence: 99%

“…By decreasing the emitter depth, the quantum efficiency ( QE ) performance of the cell is increased while the

is decreased. On top of that, Shaimaa et al [ 92 ] emphasized the trade-off relation between the emitter thickness and the performance parameter, especially with the

and

values. In this regard, a thick p-doped emitter with a high doping concentration shall therefore decreases the minority carrier lifetime hence decreases the

value.…”

Section: Gasb-based Tpv Cellmentioning

confidence: 99%