En route to electrically pumped broadly tunable middle infrared lasers based on transition metal doped II–VI semiconductors

Fedorov, Vladimir V.; Gallian, A.; Moskalev, Igor; Mirov, Sergey

doi:10.1016/j.jlumin.2006.08.010

Cited by 54 publications

(26 citation statements)

References 54 publications

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“…7) and can be interpreted as the superposition of two contributions: first one centred around 2.2 eV, as the PL band detected for the single crystal, which was yet reported in the literature and was attributed, with the help of electron spin resonance results, to the ''Cr 2 + -Cr 1 + '' charge transfer process [37][38][39][40]. The presence of this band indicates that chromium ions have been incorporated in the Cr 2 + state and corroborates the abovebandgap excitation mechanisms proposed by Fedorov et al [11] and presented previously.…”

Section: Visible Plsupporting

confidence: 88%

“…Under indirect excitation (458 nm) the PL intensity of the film was too small to allow a decay analysis. Moreover the PL decay of a Cr 2 + :ZnSe single crystal under indirect excitation (abovebandgap and below bandgap) was reported by Fedorov et al [11].…”

Section: Lifetime Measurementsmentioning

confidence: 68%

“…The relaxation and the emission in the mid-IR are then obtained as described in the previous mechanism. In the literature, mid-IR emission was also observed for Cr 2 + :ZnSe single crystals under sub-band gap excitation (532 nm) and the corresponding excitation mechanism was described by Fedorov et al [11] as follows -An incident photon ionizes the Cr 2 + ion to the Cr + state by releasing a hole to the valence band. A second pump photon ionizes the Cr + ion to the excited state Cr 2 + n putting an electron in the conduction band.…”

Section: Pl Resultsmentioning

confidence: 98%

“…In particular, the small crystal field splitting found for transition metal ions in II-VI materials allows for operation in the spectral range of 2-5 mm [5,6]. In the case of Cr 2 + :ZnSe, pulsed [7], continuous wave [8], mode locked [9] and electroluminescence [10,11] operations are yet to be demonstrated at RT in the 2-3 mm region [12]. Research studies of Cr 2 + :ZnSe are not limited to bulk crystals, but also include thin films prepared by molecular beam epitaxy (MBE) [13], pulsed laser ablation [14] and radiofrequency (RF) magnetron sputtering [15,16] techniques for the purpose of fabricating compact laser systems.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Luminescence properties of Cr2+:ZnSe: Comparison between a single crystal and a film deposited by RF magnetron co-sputtering

Vivet

Doualan

Morales

et al. 2010

Journal of Luminescence

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Section: Visible Plsupporting

confidence: 88%

Section: Lifetime Measurementsmentioning

confidence: 68%

Section: Pl Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Luminescence properties of Cr2+:ZnSe: Comparison between a single crystal and a film deposited by RF magnetron co-sputtering

Vivet

Doualan

Morales

et al. 2010

Journal of Luminescence

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“…4 [5,41]. Cr doped II-VI QD technology as proposed in [42] can provide an interesting pathway for future mid-IR tunable solid-state lasers with electrical pumping.…”

Section: Tm Doped Nano-particles and Quantum Dotsmentioning

confidence: 99%

Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials

Mirov

Fedorov

Moskalev

et al. 2010

Laser & Photonics Reviews

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210

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Recent progress in chromium and iron doped II-VI semiconductor materials makes them the laser sources of choice when one needs a compact system with tunability over 1.9-5.1 μm. Output powers exceeding 10 W and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological (low-cost ceramic material) and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable laser systems. This article reviews transition metal doped II-VI materials and recent progress in Cr-and Fe-doped solid-state mid-IR lasers.Critical areas driving future progress in Cr-and Fe-doped chalcogenide middle infrared lasers: fabrication of binary and ternary II-VI ceramic gain media with low phonon cut-off, low optical losses and high design flexibility; high performance laser design with improved characteristics in power (power scaling to dozens of Watts), spectral (spectral coverage over 1.8-6 μm), temporal (frequency comb generation), and pump domains (electrically pumped Cr-and Fe-doped II-VI quantum confined structures).

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ZnS:Cr and ZnSe:Cr thin‐film waveguide structures as electrically pumped laser media with an impact excitation mechanism

et al. 2013

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ZnS:Cr and ZnSe:Cr are the focus of studies as media for broadly tunable optically pumped lasers operating in the near-and mid-IR regions. It is of great interest to obtain such lasers electrically pumped. The effective electrical excitation of Cr 2+ ions was demonstrated only in the case of the impact mechanism for thin-film structures with insulator layers between an electroluminescent film and electrodes, which prevent avalanche breakdown at high electric field (≥ 1 MV/cm). To obtain lasing, the waveguide electroluminescent structures were used. For the first time, the stimulated emission and the laser oscillation were demonstrated in the ZnS:Cr waveguide structures. Although the lasing is unstable as yet, these results lay the foundations of a new direction in laser physics aimed at creation of electrically pumped lasers by dint of impact excitation. Published results concerning various aspects of ZnS:Cr and ZnSe:Cr thin films and waveguide structures as promising electrically pumped laser media are reviewed. The causes of the instability of the laser oscillation and means of improving their characteristics are also considered.

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En route to electrically pumped broadly tunable middle infrared lasers based on transition metal doped II–VI semiconductors

Cited by 54 publications

References 54 publications

Luminescence properties of Cr2+:ZnSe: Comparison between a single crystal and a film deposited by RF magnetron co-sputtering

Luminescence properties of Cr2+:ZnSe: Comparison between a single crystal and a film deposited by RF magnetron co-sputtering

Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials

ZnS:Cr and ZnSe:Cr thin‐film waveguide structures as electrically pumped laser media with an impact excitation mechanism

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En route to electrically pumped broadly tunable middle infrared lasers based on transition metal doped II–VI semiconductors

Cited by 54 publications

References 54 publications

Luminescence properties of Cr2+:ZnSe: Comparison between a single crystal and a film deposited by RF magnetron co-sputtering

Luminescence properties of Cr2+:ZnSe: Comparison between a single crystal and a film deposited by RF magnetron co-sputtering

Progress in Cr2+and Fe2+doped mid‐IR laser materials

ZnS:Cr and ZnSe:Cr thin‐film waveguide structures as electrically pumped laser media with an impact excitation mechanism

Contact Info

Product

Resources

About

Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials