Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study

Liu, Enzuo; Wang, Chong-Yu

doi:10.1016/j.susc.2006.02.031

Cited by 10 publications

(3 citation statements)

References 21 publications

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“…8) Previously, surface structures and In adatom diffusion on the InAs/GaAs(001) have been studied from theoretical viewpoints. [9][10][11][12][13][14][15] However, there have been few theoretical studies for the formation of InAs QDs on a GaAs(001) substrate because of the difficulty in understanding the behavior of the InAs WL grown on the GaAs(001) substrate. On the basis of ab initio calculations considering growth conditions such as temperature and pressure, we revealed that the formation of the (n × 3) surface including In-As dimers is crucial for MBE growth on the InAs WL.…”

Section: Introductionmentioning

confidence: 99%

Effect of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)

Yonemoto¹,

Akiyama²,

Pradipto³

et al. 2019

Jpn. J. Appl. Phys.

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The effect of surface reconstructions on misfit dislocation (MD) formation in InAs/GaAs(001) is theoretically investigated using empirical interatomic potentials. According to the calculated cohesive energy using empirical interatomic potentials, in the case of InAs/GaAs(001) system applied surface reconstruction, the system with MD of a 5/7-atom ring core structure is stable compared with a coherently grown system at 3.0 monolayer, which is larger than that of the ideal surface. This result reveals that the energy gain due to MD formation on the reconstructed surface is smaller than that of the ideal surface. The analysis of atomic configurations of the reconstructed surface with MD confirms that the strains caused by MD formation destabilize the reconstructed surface. Furthermore, we estimate the growth behavior of InAs/GaAs(001) using macroscopic theory and find that MD formation is suppressed by surface reconstruction. These results suggest that surface reconstruction is crucial for MD formation and the resultant growth behavior.

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Section: Introductionmentioning

confidence: 99%

Effect of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)

Yonemoto¹,

Akiyama²,

Pradipto³

et al. 2019

Jpn. J. Appl. Phys.

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“…Three different growth modes for metal and semiconductor epitaxial films have been reported: a layer by layer growth mode, an island growth mode, and a layer by layer plus an island growth mode . Frank‐van der Merwe, Volmer‐Weber, and Stranski‐Krastanow have proposed different models, FvdM, VW, and SK models, to explain the three types of growth modes, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…Three different growth modes for metal and semiconductor epitaxial films have been reported: a layer by layer growth mode, [9][10][11] an island growth mode, [12][13][14][15] and a layer by layer plus an island growth mode. [16][17][18][19][20] Frank-van der Merwe, 21 Volmer-Weber, 22 and Stranski-Krastanow 23 have proposed different models, FvdM, VW, and SK models, to explain the three types of growth modes, respectively. Generally, the growth mode of thin films is greatly influenced by interfacial energy during the epitaxial growth process.…”

Section: Introductionmentioning

confidence: 99%

Origin of Different Growth Modes for Epitaxial Manganite Films

et al. 2013

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The microstructures of the Bi0.4Ca0.6MnO3 (BCMO) and La0.67Ca0.33MnO3 (LCMO) epitaxial films are investigated by transmission electron microscopy in detail. BCMO epitaxial films (~ 10 and ~ 40 nm) exhibit an island growth mode whereas the LCMO films (~ 6 and ~ 30 nm) follow a layer by layer growth mode. Combined with the critical thickness models for the expected onset of the misfit dislocations in epitaxial films, an atomic collapse model is introduced to explain their mechanism of formation in manganite films. At the beginning of deposition, the strain caused by the lattice mismatch between the epitaxial film and substrate can be accommodated by elastic deformation. With the increase of film thickness, the strain becomes larger and larger. When the film thickness reaches the critical thickness, the strain can only be relaxed by the formation of misfit dislocations. Meanwhile, the atomic configuration of the epitaxial film will reorganize and some atoms begin to collapse, thus an island morphology will be formed. Once the collapse morphology is formed, maintenance of this wave‐like morphology depends on atomic diffusion length of the deposited atoms. If the diffusion length of the deposited atoms is long, the island morphology will not be maintained. If the diffusion length of the deposited atoms is short, the island morphology will keep until the epitaxial film is thick enough. The results could shed light on the growth modes for other perovskite epitaxial films.

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Transition metal oxide nanostructures: premeditated fabrication and applications in electronic and photonic devices

Diao

Wang

2017

J Mater Sci

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Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study

Cited by 10 publications

References 21 publications

Effect of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)

Effect of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)

Origin of Different Growth Modes for Epitaxial Manganite Films

Transition metal oxide nanostructures: premeditated fabrication and applications in electronic and photonic devices

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