2019
DOI: 10.1016/j.aeue.2019.152859
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Energy and area efficient imprecise compressors for approximate multiplication at nanoscale

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Cited by 94 publications
(76 citation statements)
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References 30 publications
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“…Finally, we compare the proposed multiplier with the stateof-the-art multipliers based on inexact compressors [28], [32], [35], [36]. As these multipliers are 8-bit designs or implemented in FinFET technology, we compare them only in terms of PDP reductions and NMED reported in [28], [32], [35], [36]. Table 6 shows the reported NMED and PDP reduction for LOBO12−-12/8 the state-of-the-art multipliers based on inexact compressors.…”
Section: Synthesis Resultsmentioning
confidence: 99%
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“…Finally, we compare the proposed multiplier with the stateof-the-art multipliers based on inexact compressors [28], [32], [35], [36]. As these multipliers are 8-bit designs or implemented in FinFET technology, we compare them only in terms of PDP reductions and NMED reported in [28], [32], [35], [36]. Table 6 shows the reported NMED and PDP reduction for LOBO12−-12/8 the state-of-the-art multipliers based on inexact compressors.…”
Section: Synthesis Resultsmentioning
confidence: 99%
“…Furthermore, the authors proposed an algorithm for the placement of XOR-free compressors into the partial product tree. Ahmadinejad et al [35] designed inexact compressors in FinFET technology. Similarly to existing approaches, authors altered truth tables for exact 4:2 and 5:2 compressors to create inexact compressors.…”
Section: B Approximate Non-logarithmic Multipliersmentioning
confidence: 99%
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“…In an imprecise multiplier, partial product reduction can be realized through approximate compressors. Utilizing low‐complexity and energy‐efficient compressors with an adequate level of accuracy can remarkably enhance the entire performance of the multipliers, especially in error‐resilient applications such as image processing 19‐22 …”
Section: Introductionmentioning
confidence: 99%
“…Among the discovered nanomaterials, carbon nanotubes with extraordinary mobility, ultrahigh immunity to the short channel effects, superior mean free path, and extreme current delivery are a breakthrough, surpassing other nanomaterials as the gate channel material in fabrication of high‐performance nanotransistors 23 . Carbon nanotube field‐effect transistors (CNTFETs) have laid the groundwork in nanoscale digital circuits and systems 24‐26 . However, few works have focused on the analog and RF application of these transistors 27‐29 .…”
Section: Introductionmentioning
confidence: 99%