Enhanced crystalline size of undoped GaN powders obtained by nitridation of metallic gallium

Gastellóu, Erick; Morales, C.; Garcı́a, R.; García, Gregorio Gómez-Jarabo; Hirata, G. A.; Galeazzi, R.; Herrera, Ana M.; Rosendo, E.; Díaz, T.; Ramos, Juan Ramon; Romano, Renan Arnon; Coyopol, A.

doi:10.1016/j.optmat.2018.06.021

Cited by 8 publications

(14 citation statements)

References 20 publications

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“…This work presents the effects of doping with Mg or Zn in the structural, and the luminescent properties of GaN films, which were grown via radio-frequency magnetron sputtering, using laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. These powders were reported by our research team in previous works [16,17,19]. The obtained films might be applied as buffer layers in III-Nitride biosensors, pacemakers, and micro-electromechanical systems (MEMS).…”

Section: Introductionmentioning

confidence: 68%

“…First, this deposition technique does not produce good crystalline quality in the layers at room temperature; however, when the substrate is heated, the crystalline quality in the films could get better [22]. Second, the presence of nano-crystallites hinders the crystalline quality [16]. On the other hand, Figure 2a,b does not show a significant difference between their diffraction angles.…”

Section: Structural Analysismentioning

confidence: 95%

“…However, this technique might require the availability of GaN powders with high purity and a single-phase for use as a raw material in the targets' production. Additionally, GaN powders can be doped with Mg or Zn during the synthesis process [16][17][18][19][20][21]. This work presents the effects of doping with Mg or Zn in the structural, and the luminescent properties of GaN films, which were grown via radio-frequency magnetron sputtering, using laboratory-prepared targets with Mg-doped or Zn-doped GaN powders.…”

Section: Introductionmentioning

confidence: 99%

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Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

Gastellóu

García

Herrera³

et al. 2021

Applied Sciences

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GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance of nano-crystallites with an average of 7 nm. Scanning electron microscopy and transmission electron microscopy showed good adherence to silicon non-native substrate, as well as homogeneity, with a grain size average of 0.14 µm, and 0.16 µm for the GaN films doped with Zn or Mg, respectively. X-ray photo-electron spectroscopy demonstrated the presence of a very small amount of magnesium (2.10 mol%), and zinc (1.15 mol%) with binding energies of 1303.18, and 1024.76 eV, respectively. Photoluminescence spectrum for the Zn-doped GaN films had an emission range from 2.89 to 3.0 eV (429.23–413.50 nm), while Mg-doped GaN films had an energy emission in a blue-violet band with a range from 2.80 to 3.16 eV (443.03–392.56 nm). Raman spectra showed the classical vibration modes A1(TO), E1(TO), and E2(High) for the hexagonal structure of GaN.

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Section: Introductionmentioning

confidence: 68%

Section: Structural Analysismentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

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Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

Gastellóu

García

Herrera³

et al. 2021

Applied Sciences

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“…On the other hand, the x-ray diffraction pattern of Fig. 3b), showed broad peaks, which could indicate the presence of nanocrystals [17]. For undoped GaN layers, the FWHM obtained for (100) plane orientation was 0.86°, 1.43° for (002), 1.15° for (101), 0.01° for (102) and 1.05° for (110).…”

Section: Resultsmentioning

confidence: 90%

Structural and Optical Changes of Undoped GaN Layers Grown via Radio-frequency Magnetron Sputtering Obtained from GaN Powders

Gastellóu¹,

Morales²,

García³

et al. 2019

EJERS

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Undoped GaN layers were grown via radio-frequency magnetron sputtering, using a target manufactured with undoped GaN powders. Where the GaN powders were sintetized by nitridation of metallic gallium at 1000 °C in ammonia flow for two hours. X-ray diffraction patterns demonstrated that there are not a significant difference between the diffraction angles of the GaN powders and the GaN layers. The x-ray diffraction patterns for the GaN powders showed narrow peaks with a crystal size of 41 nm, while the GaN layers showed broad peaks with a crystal size of 7.7 nm. Scanning electron microscopy micrographs demonstrated the formation of crystals of irregular size with an average length of 1.56 μm for the GaN powders, while a homogeneous surface morphology with a thickness of 6.6 μm for the GaN layers was observed. Photoluminescence spectra showed a high emission at 3.49 eV (355.13 nm) for the GaN powders and an emission band energy located at 3.42 eV (361.54 nm) for the GaN layers, both emission bands were related to the band-to-band transition for the GaN. Raman spectra for the GaN powders showed the A1(TO), E1(TO), and E2(High) classical vibration modes. The GaN layers only showed the A1(TO) mode.

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“…To synthesize the undoped GaN powders, only 3.02 g (43 mmol) of metallic gallium was used. Equation (1) shows the proposed chemical reaction to synthesize undoped GaN [17]:…”

Section: A Undoped Gan Powdersmentioning

confidence: 99%

Structural and Optical Changes of Undoped GaN Layers Grown via Radio-frequency Magnetron Sputtering Obtained from GaN Powders

Gastellóu

Morales

García

et al. 2019

EJENG

Self Cite

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Undoped GaN layers were grown via radio-frequency magnetron sputtering, using a target manufactured with undoped GaN powders. Where the GaN powders were sintetized by nitridation of metallic gallium at 1000 °C in ammonia flow for two hours. X-ray diffraction patterns demonstrated that there are not a significant difference between the diffraction angles of the GaN powders and the GaN layers. The x-ray diffraction patterns for the GaN powders showed narrow peaks with a crystal size of 41 nm, while the GaN layers showed broad peaks with a crystal size of 7.7 nm. Scanning electron microscopy micrographs demonstrated the formation of crystals of irregular size with an average length of 1.56 ?m for the GaN powders, while a homogeneous surface morphology with a thickness of 6.6 ?m for the GaN layers was observed. Photoluminescence spectra showed a high emission at 3.49 eV (355.13 nm) for the GaN powders and an emission band energy located at 3.42 eV (361.54 nm) for the GaN layers, both emission bands were related to the band-to-band transition for the GaN. Raman spectra for the GaN powders showed the A1(TO), E1(TO), and E2(High) classical vibration modes. The GaN layers only showed the A1(TO) mode.

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Enhanced crystalline size of undoped GaN powders obtained by nitridation of metallic gallium

Cited by 8 publications

References 20 publications

Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

Structural and Optical Changes of Undoped GaN Layers Grown via Radio-frequency Magnetron Sputtering Obtained from GaN Powders

Structural and Optical Changes of Undoped GaN Layers Grown via Radio-frequency Magnetron Sputtering Obtained from GaN Powders

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