“…For more details on the pin‐diode theory, the reader is suggested to review relevant literatures (Schropp & Zeman, 1998; Shah, 2010; Street, 1991). During the last decade, the use of carbon nanotubes in thin film amorphous silicon has been of great interest for researchers as light trapping structures, antireflective coatings, transparent electrodes, and p‐type window layer contacting a‐Si:H to form heterojunction (Alekseeva et al, 2018; Del Gobbo et al, 2011; Funde et al, 2016; J. Kim et al, 2012; P. M. Rajanna et al, 2018, 2019; Schriver et al, 2010; Tu et al, 2012; Zhou et al, 2014, 2008, 2009). Similar to SWCNTs/c‐Si heterojunction (Hu et al, 2019; Jeon et al, 2018; Tune et al, 2012), SWCNTs/a‐Si:H also form semiconductor/semiconductor or metal/semiconductor junction as shown in Figure 1a,b.…”