Enhanced electromagnetic shielding effectiveness of MWCNT/zinc-doped nickel ferrite nanocomposites

Chahar, Meenu; Dabas, Samiksha; Thakur, O. P.

doi:10.1016/j.ceramint.2021.11.078

Cited by 15 publications

(2 citation statements)

References 45 publications

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“…Thus, the absorption coefficient A could be determined from A = 1 – R – T . Furthermore, the EM shielding effectiveness (SE) can be calculated by the following equations: SE normalR = prefix− 10 log ( 1 − R ) SE normalA = prefix− 10 log ( T 1 − R ) SE normalT = SE normalR + SE normalA + SE normalM where SE T , SE R , SE A , and SE M denote the total SE, the surface reflection SE, the internal absorption SE, and the multireflection SE, respectively.…”

Section: Resultsmentioning

confidence: 99%

Electromagnetic Wave Absorption and Shielding Performances and Mechanisms of a Porous Ti₃AlC₂/SiC Gradient Composite

Yao

Zeng

et al. 2023

ACS Appl. Electron. Mater.

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A porous Ti3AlC2/SiC gradient composite with highly interconnective pores and gradient variation of the Ti3AlC2 content was prepared by the template-replication method. Electromagnetic wave absorption and shielding performances of the as-prepared composite were investigated by the waveguide method in the range of the X-band. It reveals that the complex permittivity and EMW shielding properties of the Ti3AlC2/SiC porous gradient composite increased with increasing sintering temperature from 800 to 1000 °C. Meanwhile, rather than SER, SEA contributed to the EMW shielding effectiveness effectively. The porous composite sintered at 800 °C exhibited the lowest reflection loss of −42.87 dB, while that sintered at 900 °C exhibited the widest effective absorption bandwidth of 3.2 GHz. The porous Ti3AlC2/SiC gradient composite is a more ideal electromagnetic wave absorption and shielding material than the conventional SiC foam.

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Section: Resultsmentioning

confidence: 99%

Electromagnetic Wave Absorption and Shielding Performances and Mechanisms of a Porous Ti₃AlC₂/SiC Gradient Composite

Yao

Zeng

et al. 2023

ACS Appl. Electron. Mater.

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“…Especially, the spinel ferrites are a diverse class of materials with significant technological applications in both magnetic and electronic devices. Because of their diverse characteristics, spinel ferrites have been widely used in various applications like electromagnetic devices [12], resonators [13], high-density data storage [7], and spintronics devices [14]. Previously, spinal ferrites were employed to develop the RS devices [8,[15][16][17] and demonstrated the non-volatile memory applications [18,19].…”

Section: Introductionmentioning

confidence: 99%

NiFe₂O₄ nanoparticles for non-volatile bipolar resistive switching memory device

Patil,

Nikam,

Teli

et al. 2023

Semicond. Sci. Technol.

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The existing work addresses the chemical synthesis of NiFe2O4 (NFO) nanoparticles (NPs) with the help of PVP as a capping agent and NiFe2O4 NPs are used as a switching layer material in memory device. For the confirmation of the materials phase, composition, and optical properties, various analytical techniques were used. By the support of the X-ray diffraction (XRD) technique, crystal structure (cubic spinel) and crystallite size (20.12 nm) were determined. Field emission scanning electron microscopy (FE-SEM) was used to confirm the material morphology. Raman Spectroscopy and Fourier Transform Infrared Spectroscopy (FT-IR) were applied to identify the of NiFe2O4 NPs functional groups. For the non-volatile memory device , Ag/NFO/FTO was fabricated, which shows bipolar resistive switching with good endurance (104 cycles) and retention (6 x 103 s). The I–V characteristics of the actual device indicates that the deposition order of the film is a decisive part in the device performance. Moreover, the conduction and resistive switching mechanism of the device were also carried out.

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Polyvinylidene fluoride—An advanced smart polymer for electromagnetic interference shielding applications—A novel review

Nivedhitha

Jeyanthi²

2023

Polymers for Advanced Techs

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Emerging technology and modernization have become a worldwide threat to human life in all aspects. Worldwide, all countries are in the race to develop the most advanced electronic devices and gadgets as they reflect the country's superiority and economic development. Specialists have forecasted that during and after the pandemic, the addiction toward modern gadgets have increased by 40% among the people irrespective of age. A few researchers have reported that the world economy is dependent on and dominated by countries manufacturing semiconductors, mobiles, electronic chips, and so on. People started sensing that modern devices are like a boon, as their lives seem to be more connected and comfortable with all their needs and wants being fulfilled at their doorsteps. But this boon is slowly whirling as a severe threat to human lives. Due to this rapid usage of electronic devices, electromagnetic interference (EMI) is drastically growing, which is considered a global warning issue for commercial and biological systems. So advanced countries have decided to make EMI shielding a compulsory entity to be implemented in all advanced electronic devices. Though traditional materials like metals and carbon allotropes have excellent shielding properties, they cannot cope with today's mass production of modern devices. Thus, researchers had to find a suitable substitute material that should possess properties such as sustainability and biocompatibility to overcome problems faced by the conventional materials. Thus, polymers have come into the world of EMI shielding applications. Polyvinylidene fluoride (PVDF), a non‐conductive polymer from the family of Fluorocarbons, is creating history in the field of EMI shielding applications. PVDF astonished researchers with its versatile features, such as light weight, flexibility, and easy processibility with excellent dielectric and piezoelectric properties. Though they are poor in electrically conductive properties, incorporating metals, carbon allotropes, and metal oxides as fillers make them superior to the existing conventional materials. Thus, the main objective of this review article is to highlight the uniqueness of PVDF as an advanced polymer for EMI shielding applications. It has been noted that PVDF is more suitable for EMI shielding in X, K, and Ku band frequencies. But overall, we noticed that the performance of PVDF has a great impact by incorporating a combination of metal and carbon allotrope enhances the shielding effectiveness up to 65 dB in the Ku‐band (Kurz‐under) frequency band range of (12–18 GHz).

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Enhanced electromagnetic shielding effectiveness of MWCNT/zinc-doped nickel ferrite nanocomposites

Cited by 15 publications

References 45 publications

Electromagnetic Wave Absorption and Shielding Performances and Mechanisms of a Porous Ti₃AlC₂/SiC Gradient Composite

Electromagnetic Wave Absorption and Shielding Performances and Mechanisms of a Porous Ti₃AlC₂/SiC Gradient Composite

NiFe₂O₄ nanoparticles for non-volatile bipolar resistive switching memory device

Polyvinylidene fluoride—An advanced smart polymer for electromagnetic interference shielding applications—A novel review

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Enhanced electromagnetic shielding effectiveness of MWCNT/zinc-doped nickel ferrite nanocomposites

Cited by 15 publications

References 45 publications

Electromagnetic Wave Absorption and Shielding Performances and Mechanisms of a Porous Ti3AlC2/SiC Gradient Composite

Electromagnetic Wave Absorption and Shielding Performances and Mechanisms of a Porous Ti3AlC2/SiC Gradient Composite

NiFe2O4 nanoparticles for non-volatile bipolar resistive switching memory device

Polyvinylidene fluoride—An advanced smart polymer for electromagnetic interference shielding applications—A novel review

Contact Info

Product

Resources

About

Electromagnetic Wave Absorption and Shielding Performances and Mechanisms of a Porous Ti₃AlC₂/SiC Gradient Composite

Electromagnetic Wave Absorption and Shielding Performances and Mechanisms of a Porous Ti₃AlC₂/SiC Gradient Composite

NiFe₂O₄ nanoparticles for non-volatile bipolar resistive switching memory device