Enhanced H2S gas sensing properties of multiple-networked Pd-doped SnO2-core/ZnO-shell nanorod sensors

Kim, Hyun-Su; Jin, Changhyun; Park, Sunghoon; Lee, Chongmu

doi:10.1016/j.materresbull.2012.04.038

Cited by 35 publications

(20 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The response was perfectly stable and recovered its initial state, exhibiting switching characteristics. Table 1 shows the comparison between the H 2 S response of the proposed YMnO 3 nanopowder and that in the literature [55][56][57][58][59][60][61][62][63][64]. These results confirmed that YMnO 3 nanopowder has high sensitivity and good selectivity toward…”

Section: Page 11 Of 32supporting

confidence: 67%

Perovskite hexagonal YMnO3 nanopowder as p-type semiconductor gas sensor for H2S detection

Balamurugan

Lee

2015

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

Section: Page 11 Of 32supporting

confidence: 67%

Perovskite hexagonal YMnO3 nanopowder as p-type semiconductor gas sensor for H2S detection

Balamurugan

Lee

2015

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

“…It is well known that the surface of the nanoribbon sensor is covered with chemisorbed oxygen ions such as O - , O 2 - , and O 2 2- . When temperature is elevated, the reactions can be written as follows [29]:…”

Section: Resultsmentioning

confidence: 99%

Synthesis and high sensing properties of a single Pd-doped SnO2 nanoribbon

Liu

Zhang

et al. 2014

Nanoscale Res Lett

View full text Add to dashboard Cite

Monocrystal SnO2 and Pd-SnO2 nanoribbons have been successfully synthesized by thermal evaporation, and novel ethanol sensors based on a single Pd-SnO2 nanoribbon and a single SnO2 nanoribbon were fabricated. The sensing properties of SnO2 nanoribbon (SnO2 NB) and Pd-doped SnO2 nanoribbon (Pd-SnO2 NB) sensors were investigated. The results indicated that the SnO2 NB showed a high sensitivity to ethanol and the Pd-SnO2 NB has a much higher sensitivity of 4.3 at 1,000 ppm of ethanol at 230°C, which is the highest sensitivity for a SnO2-based NB. Pd-SnO2 NB can detect ethanol in a wide range of concentration (1 ~ 1,000 ppm) with a relatively quick response (recovery) time of 8 s (9 s) at a temperature from 100°C to 300°C. In the meantime, the sensing capabilities of the Pd-SnO2 NB under 1 ppm of ethanol at 230°C will help to promote the sensitivity of a single nanoribbon sensor. Excellent performances of such a sensor make it a promising candidate for a device design toward ever-shrinking dimensions because a single nanoribbon device is easily integrated in the electronic devices.

show abstract

“…A viscous flow or fluidized bed reactor configuration is suitable for coating nanoparticles using ALD. More commonly, ALD of ZnO has been performed on 1D structures such as nanorods, nanotubes, nanofibers, and nanowires made of Si or SiO 2 [365][366][367][368][369][370][371][372], SnO 2 [373][374][375][376], TiO 2 (figure 15) [377], and Al 2 O 3 [378,379]. Alternatively, ALD of TiO 2 has been performed on ZnO nanofibers (figure 15) to produce TiO 2 -ZnO core-shell nanofibers [377].…”

Section: Core-shell Structuresmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

show abstract

Enhanced H2S gas sensing properties of multiple-networked Pd-doped SnO2-core/ZnO-shell nanorod sensors

Cited by 35 publications

References 38 publications

Perovskite hexagonal YMnO3 nanopowder as p-type semiconductor gas sensor for H2S detection

Perovskite hexagonal YMnO3 nanopowder as p-type semiconductor gas sensor for H2S detection

Synthesis and high sensing properties of a single Pd-doped SnO2 nanoribbon

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Contact Info

Product

Resources

About