Enhanced internal quantum efficiency in graphene/InGaN multiple-quantum-well hybrid structures

Huang, Huei Min; Chang, Cheng-Yuan; Hsu, Yueh Shan; Lu, Tien−Chang; Lan, Yu-Ping; Lai, Wei–Chih

doi:10.1063/1.4745211

Cited by 8 publications

(7 citation statements)

References 18 publications

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“…In contrast, for the InGaN/GaN LED on sapphire, the IQE is initially ∼60% that of the freestanding GaN grown using a Si substrate at 7 K and abruptly declines at 70 K. At room temperature, the IQE saturated at ∼8%. Although the InGaN/GaN LEDs fabricated in this work were basically grown on Si substrates, these remarkable IQE characteristics are comparable to those previously reported using a sapphire substrate. − …”

Section: Results and Discussionsupporting

confidence: 84%

InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate

2018

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We demonstrate the first InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN grown using a Si substrate. Transmission electron microscopy and X-ray diffraction analysis revealed that the InGaN/GaN multi quantum wells (MQWs) on freestanding GaN grown using Si substrates have excellent structural properties suitable for high-performance optical devices. Photoluminescence measurements confirm the high crystal quality of the InGaN/GaN MQWs and remarkable emission wavelength uniformity with a standard deviation of 0.68%. Light−current−voltage characteristics indicate that the InGaN/GaN LEDs on freestanding GaN grown using a Si substrate exhibit a forward voltage of 3.75 V at a current of 20 mA and rectifying characteristics with very low leakage current and high breakdown voltage. Furthermore, they provide stable blue electroluminescence (λ = 460 nm) with a small variation in the emission wavelength of 0.2% over a 2 in. area. The internal quantum efficiency of InGaN/GaN LEDs on freestanding GaN grown using Si substrates is remarkable at ∼80%. Despite using Si substrates as the support, the optoelectronic properties of the InGaN/GaN LEDs are outstanding. We believe that the InGaN/GaN LEDs based on freestanding GaN crystals extracted from Si substrates are promising for the development of GaN-based high-performance devices.

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Section: Results and Discussionsupporting

confidence: 84%

InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate

2018

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“…While in graphene it lies between 6%-16% [4]. However, on integration with Q-dots, its IQE can be increased upto 18% [42] and by using quantum well hybrids, it increased to 25% [43]. MoS 2 in an electrolyte bath, with vertical charge transport, shows an IQE as high as 44% [44].…”

Section: Tmdcsmentioning

confidence: 99%

Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids

et al. 2022

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Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths >> 1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.

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“…High transfer speed light sources are fundamental for the VLC framework. The extraordinary advancements in GaN-based solid-state lighting (SSL) in ongoing 10 years have changed the VLC framework into accessible applications [6], [7], [8], [9]. A growing amount of importance will be given to LED light sources with high modulation rates and low power consumption as Internet of Things (IoT) technology advances.…”

Section: Introductionmentioning

confidence: 99%

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

Qiu

Tao

et al. 2023

IEEE Photonics J.

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Micro-light-emitting diodes (micro-LEDs) with high modulation rates and low power consumption could attract growing attention as visible light communication (VLC) technology advances. The designed and fabricated semi-polar micro-LEDs have achieved high bandwidth at low current injection due to the reduced quantum-confined Stark effect (QCSE), which was significantly greater than that of typical c-plane at the same current injection. Semi-polar green micro-LEDs got a -3 dB bandwidth that surpasses 500 MHz and 1 GHz at low current densities of 43.8 A/cm 2 and 120.6 A/cm 2 , while blue micro-LEDs exceed 500 MHz at low current densities of 76.6 A/cm 2 , respectively. Additionally, the free space VLC system has shown semi-polar blue and green micro-LED transmission data rates of 3.495 Gbps (433 A/cm 2 ) and 3.483 Gbps (402 A/cm 2 ) respectively. Semi-polar micro-LEDs, which can achieve low power consumption and high bandwidth, are anticipated to play a significant role in the development of energy-efficient VLC in the future.

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Enhanced internal quantum efficiency in graphene/InGaN multiple-quantum-well hybrid structures

Cited by 8 publications

References 18 publications

InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate

InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate

Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

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