Enhanced Spin Hall Effect in S‐Implanted Pt

Abstract

High efficiency of charge–spin interconversion in spin Hall materials is a prime necessity to apprehend intriguing functionalities of spin–orbit torque for magnetization switching, auto‐oscillations, and domain wall motion in energy‐efficient and high‐speed spintronic devices. To this end, innovations in fabricating advanced materials that possess not only large charge–spin conversion efficiency but also viable electrical and spin Hall conductivity are of importance. Here, a new spin Hall material designed by implanting low energy 12 keV sulfur ions in heavy metal Pt, named as Pt(S), is reported that demonstrates eight times higher conversion efficiency as compared to pristine Pt. The figure of merit, spin Hall angle (θSH), up to of 0.502 together with considerable electrical conductivity of 1.65 × 106 Ω–1 m–1 is achieved. The spin Hall conductivity increases with increasing , as , implying an intrinsic mechanism in a dirty metal conduction regime. A comparatively large of 8.32 × 105 () Ω–1 m–1 among the reported heavy‐metals‐based alloys can be useful for developing next‐generation spintronic devices using spin–orbit torque.

Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO3‐Based Interfaces

“…Hence, the 𝜃 created at the q-2DEG in our STO/amorphous oxide interfaces are shown to be comparable in terms of charge-to-spin conversion efficiencies with the 2DEG reported for the epitaxial oxides on STO. Moreover, the 𝜃 in our sample is 1 or 2 orders of magnitude higher than that of HM, such as Pt 37 , Ta 21 , W 38 , and also than engineered HM [24][25][26] . As seen from the sheet resistance values, the q-2DEG in STO/AlN has 1 order smaller resistance values compared to STO/Al2O3.…”

“…is the antisymmetric component with weight A, and ΔH and H are the half-width-at-half-maximum and resonance field of the FMR spectra25,35 . From the fit, we obtain µoΔ𝐻= 4 34.…”

Challenges and Applications to Operando and In Situ TEM Imaging and Spectroscopic Capabilities in a Cryogenic Temperature Range

“…The current pulse is applied through the Pt layer sandwiched in between the Y 3 Fe 5 O 12 and Al 2 O 3 layers. The applied charge current in the Pt layer will generate the spin current due to the spin Hall effect. , The generated spin current will exert the torque on the magnetization direction of the Y 3 Fe 5 O 12 thin film which allows control of the domain wall motion operando inside the TEM. We observe that the domain wall motion is well visible above a current density of 2.4 × 10 6 A cm –2 , compared with an ∼5 × 10 6 A cm –2 current density reported in ex situ experiments .…”

Classification tasks using input driven nonlinear magnetization dynamics in spin Hall oscillator

“…𝛔 s g n θ 𝐳 ̂𝐜 is the orientation of spin injected into the ferromagnet, where 𝐳 and ̂𝐜 are the unit vectors in the direction of surface normal and the electrical current, respectively. In accordance with experiments, the material parameters used in the simulations, are: exchange constant A 110 Ω m and 𝜌 2.0  10 Ω m33,34 . The magnetic anisotropy is ignored and an in-plane external magnetic field of strength μ H 100 mT is applied to saturate the magnetization along Y direction.…”

“…The excitation and control of various magnetization oscillations can be effectively achieved with SOT [28][29][30][31] . Moreover, improvement of charge-to-spin conversion efficiency by material engineering and a significant field-like term contribution in SOT due to interfacial effects offers an interesting opportunity to explore SHO-based neuromorphic hardware [32][33][34][35] .…”