Enhanced surface hardness and tribocorrosion performance of 60NiTi by boron ion implantation and post-annealing

Chen, Yan; Zeng, Qunfeng; He, Wanjun; Zhu, Jianing

doi:10.1016/j.triboint.2020.106816

Cited by 34 publications

(14 citation statements)

References 34 publications

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“…Here, minimal hardness values corresponded to the matrix material and maximum values corresponded to large titanium diboride particles with sizes from 5 to 9.5 µm. Average microhardness value was 8 GPa, which is 1.5–2.6-times higher than the average microhardness value for pure alloys based on nickel and titanium as well as heavy alloys based on tungsten [ 23 , 24 , 25 ]. Increases in the microhardness of NiTi-TiB 2 samples obtained by high-temperature vacuum sintering are related to high hardness of titanium diboride (25–35 GPa) [ 26 ].…”

Section: Resultsmentioning

confidence: 76%

Structure, Properties and Phase Composition of Composite Materials Based on the System NiTi-TiB2

et al. 2022

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This article considers issues pertinent to the research of the phase composition, structure and mechanical properties of materials obtained from powders of composite (Ni-Ti)-TiB2, which have prospective applications in aerospace and automotive industry and engine construction. The starting powder materials (Ni-Ti)-TiB2 were obtained by self-propagating high-temperature synthesis (SHS). Research samples were produced using high-temperature vacuum sintering. It was shown that the use of such materials increases the wettability of the particles and allows the production of composites, the density of which is 95% of the theoretical one. Average particle size was 1.54 µm, average microhardness was 8 GPa, which is an order of magnitude higher than the average microhardness of pure nickel-based and titanium-based alloys, and the ultimate strength values were comparable to those of tungsten-based heavy alloys.

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Section: Resultsmentioning

confidence: 76%

Structure, Properties and Phase Composition of Composite Materials Based on the System NiTi-TiB2

et al. 2022

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“…In the practice of ion implantation, the increasing atomic displacements generally result in the increase of compressive stress at the surface of the target. [40,41] Thereby, there would be no sufficient surface compressive stress for the LLZTO and LLZTO-L samples, and the improved lifespan of LLZTO-M and LLZTO-H samples could be attributed to the ion implantation induced surface compressive stress. However, excessive ion implantation dose above the amorphization threshold value could lead to glass transition or complete amorphization of the target material.…”

Section: Resultsmentioning

confidence: 99%

Xenon Ion Implantation Induced Surface Compressive Stress for Preventing Dendrite Penetration in Solid‐State Electrolytes

Yao

Olsson

Wang

et al. 2022

Small

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Solid‐state electrolytes (SSEs) have been thrust into the limelight for the revival of energy‐dense lithium metal batteries, but still face the challenge of failure caused by the dendrite penetration. Mounting evidence indicates that dendrite penetration is related to the mechanical failure in SSEs, which calls for mechanical engineering to tackle this problem. This work reports a proof of concept that ion implantation induced surface compressive stress enables resistance in the dendrite penetration. A deterministic sequential multiple ion energies implantation is used to generate compressive stress, with implanted Xe ions distributed in a range of 160–600 Å from the surface. The symmetric lithium cells show that pellets with an implantation dose of 1013 Xe cm−2 exhibit stable stripping/plating cycles and extended lifespan, while a lower dose of 1012 Xe cm−2 cannot create sufficient stress to prevent dendrite penetration, and an excessive dose of 1014 Xe cm−2 leads to structural destruction and a decrease in stress. This improved performance is attributed to the induced surface compressive stress balanced over crystal grains, which is confirmed by grazing incidence diffraction techniques. The author's efforts demonstrate the usefulness of surface compressive stress to suppress dendrite penetration, offering more insight into rational stress–strain engineering as opposed to empirical optimization.

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“…This alteration of the performance of optical devices is larger than the typical variation brought about by fabrication errors, therefore allowing for correction or 'trimming' of such devices. The annealing process, also widely reported, is the mechanism utilised in removing the lattice defects created by implantation [65][66][67][68]. We used the annealing technique here to tune the performance of implanted optical devices for different applications, including wafer-scale testing, post-fabrication trimming, and programmable photonic circuits.…”

Section: Applications and Discussionmentioning

confidence: 99%

Ge Ion Implanted Photonic Devices and Annealing for Emerging Applications

Chen

Milošević

et al. 2022

Micromachines

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Germanium (Ge) ion implantation into silicon waveguides will induce lattice defects in the silicon, which can eventually change the crystal silicon into amorphous silicon and increase the refractive index from 3.48 to 3.96. A subsequent annealing process, either by using an external laser or integrated thermal heaters can partially or completely remove those lattice defects and gradually change the amorphous silicon back into the crystalline form and, therefore, reduce the material’s refractive index. Utilising this change in optical properties, we successfully demonstrated various erasable photonic devices. Those devices can be used to implement a flexible and commercially viable wafer-scale testing method for a silicon photonics fabrication line, which is a key technology to reduce the cost and increase the yield in production. In addition, Ge ion implantation and annealing are also demonstrated to enable post-fabrication trimming of ring resonators and Mach–Zehnder interferometers and to implement nonvolatile programmable photonic circuits.

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Enhanced surface hardness and tribocorrosion performance of 60NiTi by boron ion implantation and post-annealing

Cited by 34 publications

References 34 publications

Structure, Properties and Phase Composition of Composite Materials Based on the System NiTi-TiB2

Structure, Properties and Phase Composition of Composite Materials Based on the System NiTi-TiB2

Xenon Ion Implantation Induced Surface Compressive Stress for Preventing Dendrite Penetration in Solid‐State Electrolytes

Ge Ion Implanted Photonic Devices and Annealing for Emerging Applications

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