Enhanced valence force field model for the lattice properties of gallium arsenide

Steiger, Sebastian; Salmani-Jelodar, Mehdi; Areshkin, Denis A.; Paul, Abhijeet; Kubis, Tillmann; Povolotskyi, Michael; Park, Hong-Hyun; Klimeck, Gerhard

doi:10.1103/physrevb.84.155204

Cited by 28 publications

(34 citation statements)

References 45 publications

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“…Second, the full width at half maximum (FWHM) of the PL peak is larger than 100 meV, a result which is not consistent with the expected width of the QD emission due to inhomogeneous broadening. A peak width of about 50 meV can be inferred from the dot-size fluctuations reported here, in agreement with observations made in similar dot systems [46]. A careful analysis of the PL lineshape indicates that the emission spectrum actually consists of a superposition of inhomogeneously broadened Gaussian peaks, although large widths prevent us from resolving individual peaks.…”

Section: B Effect Of the Hydrostatic Pressuresupporting

confidence: 76%

“…,E 4 transition energies, which are much smaller than −13 meV GPa −1 , the value measured for bulk GaP [60]. The situation is completely similar to that found for the InP/GaP QD system [46], where a similar reduction was observed. The reason for such a behavior is the gradual decrease of the built-in strain (tensile or compressive) present in the structure with increasing hydrostatic pressure.…”

Section: B Effect Of the Hydrostatic Pressuresupporting

confidence: 72%

“…This standard Keating model is known to commit an error on the C 44 values and to not properly include the anharmonic effects [43][44][45][46]. Nevertheless, for GaAs and GaP, the error on C 44 is only 11%.…”

Section: B Strain Fieldmentioning

confidence: 99%

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Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationCitation for published version (APA): Robert, C., Pereira Da Silva, K., Nestoklon, M. O., Alonso, M. I., Turban, P., Jancu, J-M., ... Cornet, C. (2016). Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots. Physical Review B, 94(7), 1-11. [075445]. DOI: 10.1103/PhysRevB.94.075445 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We study the complex electronic band structure of low In content InGaAs/GaP quantum dots. A supercell extended-basis tight-binding model is used to simulate the electronic and the optical properties of a pure GaAs/GaP quantum dot modeled at the atomic level. Transitions between hole states confined into the dots and several X Z -like electronic states confined by the strain field in the GaP barrier are found to play the main role on the optical properties. Especially, the calculated radiative lifetime for such indirect transitions is in good agreement with the photoluminescence decay time measured in time-resolved photoluminescence in the µs range. Photoluminescence experiments under hydrostatic pressure are also presented. The redshift of the photoluminescence spectrum with pressure is also in good agreement with the nature of the electronic confined states simulated with the tight-binding model.

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Section: B Effect Of the Hydrostatic Pressuresupporting

confidence: 76%

Section: B Effect Of the Hydrostatic Pressuresupporting

confidence: 72%

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Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

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“…High-energy phonon features are interpreted as multiples of the same phonon rather than a combination of different phonons, as this assignment gives the best agreement with previously reported values. 27,[32][33][34] Due to a small expected variation, no temperature effect on the phonon energy can be identified. 35 As the phonon emission rate decreases, the quantum yield decreases at higher temperatures.…”

Section: /∇mentioning

confidence: 99%

Direct observation of spin-orbit splitting and phonon-assisted optical transitions in the valence band by internal photoemission spectroscopy

Lao

Perera

et al. 2013

Phys. Rev. B

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We employ internal photoemission spectroscopy to directly measure the valence-band Van Hove singularity, and identify phonons participating in indirect intervalence-band optical transitions. Photoemission of holes photoexcited through transitions between valence bands displays a clear and resolvable threshold, unlike previous reports of interband critical points which become obscure in doped materials. We also demonstrate the enhancement of optical phonon-assisted features primarily contributing to the photoemission yield. This result is evidence of the relaxation of photoexcited hot holes through intravalence-band scatterings in heterojunctions, which contrast with intervalence-band scatterings in bulks.

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“…The structure extends infinitely in the z direction (perpendicular to the page). The device is simulated using the atomistic nanoelectronics modeling tool set NEMO5 16,17 by self-consistently solving Poisson's equation and a set of multiscale transport equations. In the multiscale transport approach, the phenomenological scattering model is applied to the source thermalized reservoir, where the carrier energy levels are broadened, and imposed in the drain thermalized reservoir, where carriers dissipate their remaining kinetic energy after ballistic transmission through the central non-equilibrium device.…”

Section: Device Structure and Modeling Methodsmentioning

confidence: 99%

Performance degradation of superlattice MOSFETs due to scattering in the contacts

Long

Huang

Jiang

et al. 2016

Journal of Applied Physics

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Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec. However, the high carrier density in the superlattice source suggest that scattering may significantly degrade the ideal device performance. Such effects of electron scattering and decoherence in the contacts of superlattice MOSFETs are examined through a multiscale quantum transport model developed in NEMO5. This model couples NEGF-based quantum ballistic transport in the channel to a quantum mechanical density of states dominated reservoir, which is thermalized through strong scattering with local quasi-Fermi levels determined by drift-diffusion transport. The simulations show that scattering increases the electron transmission in the nominally forbidden minigap therefore degrading the subthreshold swing (S.S.) and the ON/OFF DC current ratio. This degradation varies with both the scattering rate and the length of the scattering dominated regions. Different superlattice MOSFET designs are explored to mitigate the effects of such deleterious scattering. Specifically, shortening the spacer region between the superlattice and the channel from 3.5 nm to 0 nm improves the simulated S.S. from 51mV/dec. to 40mV/dec.

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Enhanced valence force field model for the lattice properties of gallium arsenide

Cited by 28 publications

References 45 publications

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

Direct observation of spin-orbit splitting and phonon-assisted optical transitions in the valence band by internal photoemission spectroscopy

Performance degradation of superlattice MOSFETs due to scattering in the contacts

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