2021
DOI: 10.1016/j.jallcom.2020.156848
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Enhanced visible-light photocatalytic performances of ZnO through loading AgI and coupling piezo-photocatalysis

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Cited by 45 publications
(8 citation statements)
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“…17 Various modifications have been reported to overcome the imperfections of ZnO, including morphology and size control, 12,14 metal/non-metal element doping, 18,19 precious metal deposition, 20 and compositing with narrow band gap semiconductors. 21…”
Section: Introductionmentioning
confidence: 99%
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“…17 Various modifications have been reported to overcome the imperfections of ZnO, including morphology and size control, 12,14 metal/non-metal element doping, 18,19 precious metal deposition, 20 and compositing with narrow band gap semiconductors. 21…”
Section: Introductionmentioning
confidence: 99%
“…17 Various modifications have been reported to overcome the imperfections of ZnO, including morphology and size control, 12,14 metal/non-metal element doping, 18,19 precious metal deposition, 20 and compositing with narrow band gap semiconductors. 21 Recently, AgX (X = Cl, Br, I) and its composite photocatalysts have received extensive attention due to their excellent electrical conductivity. 22 AgCl is a type of semiconductor and its band gap value (B3.18 eV) 23 is larger than those of AgBr (B2.6 eV) 24 and AgI (B2.7 eV), 25 which can only be excited in a Chemical Synthesis and Pollution Control Key Laboratory of Sichuan Province, the ultraviolet region and in very few visible light regions.…”
Section: Introductionmentioning
confidence: 99%
“…These could be attributed to the crystal planes corresponding to (100), (002), (110), (103), and (112) phases of AgI hexagonal structure. 49,52,68 The crystallographic planes of CdO's cubic structure are demonstrated by the diffraction peaks of CdO with crystalline planes at 2q values of 33°(111), 38.6°( 200), 55.22°(220), 65.9°(311), and 69.2°(222). [69][70][71] Strong and mild diffraction peaks at 2q values of 18.79°, 29.44°, 35.22°, 49.04°, 52.29°, and 56.08°may be attributable to CdO in synthesized composites (AgI-CdO) with varying wt% AgI.…”
Section: Xrd Analysismentioning
confidence: 99%
“…The energy band potential of the narrow band gap semiconductor matches the energy band potential of ZnO, and a uniform FERMI energy level is formed between the two semiconductors, this leads to the generation of an internal electronic field and the diffusion of electrons at the conduction and valence band positions. This charge transfer effectively impedes the recombination rate of photogenerated electron–hole pairs and improves the optical quantum efficiency such as in ZnO/Bi 2 O 3 [ 12 ], MoO 3 /ZnO [ 13 ], Ag 2 O/ZnO [ 14 ], ZnO/AgI [ 15 ].…”
Section: Introductionmentioning
confidence: 99%