Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate

Wang, Taifang; Zong, Yuan; Nela, Luca; Matioli, Elison

doi:10.1109/led.2022.3189635

Cited by 5 publications

(1 citation statement)

References 21 publications

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“…This value can be also further reduced by designing a multichannel AlGaN/GaN structures to introduce more conductive channels. 6,7) The breakdown voltage (BV) is directly influenced by the electric field distribution, such that the very strong local electric field at the Schottky contact region shall be avoided. 8) The electric field profile can be homogenized by using such as the gated-edge termination, [9][10][11] tri-anode configuration, 12) field plates (FPs), [13][14][15][16][17][18] floating metal rings, 19,20) p-GaN termination [21][22][23][24] and polarization-induced electric field effect.…”

Section: Introductionmentioning

confidence: 99%

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

Wang,

Huang,

Chu

et al. 2023

Jpn. J. Appl. Phys.

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In this work, by using numerical TCAD simulations, we have systematically studied the impact of different field plates on the electrical characteristics for lateral AlGaN/GaN-based Schottky barrier diodes (SBDs) with recessed anode. The field plate enables the formation of a super-junction. When compared with the reference device without a field plate, the proposed SBDs can generate charge-coupling effect between the field plate and the recessed anode region, which can effectively reduce the electric field magnitude at the metal/sidewall interface. We also find that the electric field profiles can be affected by the field plate length, insulation layer thickness and different insulation materials with various dielectric constants. By doing so, we can enhance the breakdown voltage by homogenizing the electric field distribution in the GaN drift layer. Then, the electric field at the recessed anode region can be decreased and the GaN drift layer can be extensively depleted

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Section: Introductionmentioning

confidence: 99%

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

Wang,

Huang,

Chu

et al. 2023

Jpn. J. Appl. Phys.

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Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Ji,

Yang,

Lee

et al. 2024

Commun Eng

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Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices. The conventional method for fabricating heterostructures is by heteroepitaxy, in which epitaxy is performed on crystallographically different materials. However, epitaxial limitations in monolithic growth of dissimilar materials prevent implementation of high quality heterostructures, such as complex-oxides on conventional semiconductor platforms (Si, III-V and III-N). In this work, we demonstrate gallium nitride (GaN) high-electron-mobility transistors with crystalline complex-oxide material enabled by heterogeneous integration through epitaxial lift-off and direct stacking. We successfully integrate high-κ complex-oxide SrTiO3 in freestanding membrane form with GaN heterostructure via a simple transfer process as the gate oxide. The fabricated device shows steep subthreshold swing close to the Boltzmann limit, along with negligible hysteresis and low dynamic on-resistance, indicating very low defect density between the SrTiO3 gate oxide and GaN heterostructure. Our results show that heterogeneous integration through direct material stacking is a promising route towards fabricating functional heterostructures not possible by conventional epitaxy.

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Thermal engineering increases current density in AlGaN/GaN superlattice devices

Pavlidis,

Jamil,

Myren

et al. 2024

Applied Physics Letters

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Aluminum gallium nitride/gallium nitride multi-channel superlattice devices are receiving increasing attention as a new paradigm for driving the power density of gallium nitride based transistors toward their theoretical limit. However, the superior electrical performance of superlattice-based transistors is currently limited by excessive Joule-heating. This Letter evaluates what impact the number of superlattice channels and the buffer layer composition has on the reduction of the thermal resistance, i.e., Joule heating, of AlGaN/GaN superlattice devices. A record low thermal resistance (12.51 ± 0.34 K mm W−1) was measured via scanning thermal microscopy for non-castellated superlattice AlGaN/GaN devices with a 100 μm channel width. Overall, the use of a thin gallium nitride buffer layer, in place of a thick aluminum gallium nitride layer, reduced the buffer thermal resistance enabling the accommodation of more superlattice channels (10 vs 6), therefore augmenting the maximum power density of these devices. The superlattice device proposed here not only provides an enhanced thermal dissipation solution for high power density radio frequency electronics, but it also has the benefit of fewer fabrication steps in comparison with previously reported castellated multichannel devices.

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Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate

Cited by 5 publications

References 21 publications

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Thermal engineering increases current density in AlGaN/GaN superlattice devices

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