Enhancing electrical stability for flexible ZnO nanowire UV sensor by textured substrates

Zhao, Lihuan; Gao, Zhiyuan; Zhang, Jie; Lu, Liwei; Yu, Wenjuan; Hu, Pili; Liang, Jingming; Zou, Deshu

doi:10.1007/s10853-018-2675-8

Cited by 8 publications

(1 citation statement)

References 21 publications

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“…From the inset of Figure 2a, no obvious cracks are observed on the metal electrodes, indicating that the PD fabricated on the textured PI substrate has good electrical stability. [ 49 ] As clearly shown in Figure 2b, the photocurrent of PD‐C under 310 nm illumination is much higher than those under illumination with other wavelengths. According to the PL results in Figure 1b, these (Al,Ga)N NWs have a strong absorption of photons with the wavelengths smaller than 318 nm.…”

Section: Resultsmentioning

confidence: 90%

Detached Vertical (Al,Ga)N Nanowires to Realize the Flexible Ultraviolet Photodetector with High Ultraviolet/Visible Reject Ratio and Detectivity

et al. 2022

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Flexible ultraviolet (UV) photodetectors (PDs) can meet the growing demands and wide applications of next‐generation portable and lightweight optoelectronic devices. Herein, a flexible UV PD based on (Al,Ga)N nanowires (NWs) is proposed and successfully fabricated by numerical and experimental approaches, which have high UV/visible reject ratio (1.5 × 104) and detectivity (8 × 1010 Jones). To accelerate the carrier transport and enhance the response, the top–down–top current pathway is demonstrated by introducing interdigitated electrodes and graphene. The UV/visible reject ratio of the flexible PD can be enhanced over 40 times by removing epitaxial silicon substrate to eliminate the corresponding visible response, leading to an excellent detection selectivity. By numerical simulations, the electric field intensities of the NWs are comparative in the unbending and bending states. After −120° bending, the PD performance remains quite stable. Under different bending states, the maximum variation of different response time can be kept within 0.15 s. According to the experimental data, the barrier height is essentially unchanged under different bending states, which should be a key factor contributing to the outstanding stability of the PD.

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Section: Resultsmentioning

confidence: 90%

Detached Vertical (Al,Ga)N Nanowires to Realize the Flexible Ultraviolet Photodetector with High Ultraviolet/Visible Reject Ratio and Detectivity

et al. 2022

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ZnO Thin Film Flexible UV Photodetectors: Regulation on the ZnO/Au Interface by Piezo‐Phototronic Effect and Performance Outcomes

Duan

Cong

Jiang

et al. 2019

Adv Materials Inter

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The ZnO flexible ultraviolet photodetectors (UV PDs) with poly(ethylene terephthalate) (PET) substrate are manufactured successfully at room temperature, and the effect of strain on PDs performance are studied. When subjected to 0.2 tensile stress, the responsivity of PDs is increased by 20% and sensitivity is increased by 770%. This is due to the influence of piezo‐phototronic effect on the transport behavior of photogenerated carriers at the interface of ZnO/Au Schottky junction. The polarization charge generated by the piezoelectric element breaks the original thermodynamic equilibrium. As a consequence, the charge at the interface is being redistributed, and the Schottky barrier height (SBH) and depletion layer width change, thus regulating the interface characteristics. This effect has value for the optimization and regulation of the UV PDs performance. Furthermore, current study proves that the piezo‐phototronic effect not only exists in ZnO nanomaterials, but also has a significant piezo‐phototronic effect on high‐quality thin film ZnO materials. In addition, this study also provides an extension field for flexible UV PDs based on piezo‐phototronic effect of semiconductor materials.

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Recent Advances and a Roadmap to Wearable UV Sensor Technologies

Zou

Sastry

Gooding

et al. 2020

Adv Materials Technologies

104

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The tremendous impact of UV radiation on every individual has resulted in massive interest in development of new sensor technologies to effectively monitor the solar exposure. However, there is no comprehensive review that critically discusses the advances made in the field of wearable UV sensor technologies and to position them as next‐generation mass‐deployable wearable devices. Herein, this gap is addressed by first classifying UV detection technologies into photoelectric and photochromic systems and summarizing their unique strengths and drawbacks. This is followed by a discussion on the integration of novel materials and design concepts with these technologies to develop wearable UV sensors. Then, the commercially available wearable UV sensors are examined thoroughly together with their limitations. Toward the end, a highly critical future outlook is provided, wherein the role of technological and regulatory interventions in assisting the development and integration of wearable UV sensors in the day‐to‐day activities is discussed. More importantly, the purpose of this review is not only to provide an in‐depth understanding of the underlying UV detection mechanism, design principles, and wearable technologies but also to act as a roadmap for those interested in the development and regulation of commercially deployable wearable UV sensors.

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Enhancing electrical stability for flexible ZnO nanowire UV sensor by textured substrates

Cited by 8 publications

References 21 publications

Detached Vertical (Al,Ga)N Nanowires to Realize the Flexible Ultraviolet Photodetector with High Ultraviolet/Visible Reject Ratio and Detectivity

Detached Vertical (Al,Ga)N Nanowires to Realize the Flexible Ultraviolet Photodetector with High Ultraviolet/Visible Reject Ratio and Detectivity

ZnO Thin Film Flexible UV Photodetectors: Regulation on the ZnO/Au Interface by Piezo‐Phototronic Effect and Performance Outcomes

Recent Advances and a Roadmap to Wearable UV Sensor Technologies

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