Enhancing Si₃N₄ Waveguide Nonlinearity with Heterogeneous Integration of Few-Layer WS₂

Abstract

The heterogeneous integration of low-dimensional materials with photonic waveguides has spurred wide research interest. Here, we report on the experimental investigation and the numerical modeling of enhanced nonlinear pulse broadening in silicon nitride waveguides with the heterogeneous integration of few-layer WS 2 . After transferring a few-layer WS 2 flake of ∼14.8 μm length, the pulse spectral broadening in a dispersion-engineered silicon nitride waveguide has been enhanced by ∼48.8% in bandwidth. Through numerical modeling, an effective nonlinear coefficient higher than 600 m –1 W -1 has been retrieved for the heterogeneous waveguide indicating an enhancement factor of larger than 300 with respect to the pristine waveguide at a wavelength of 800 nm. With further advances in two-dimensional material fabrication and integration techniques, on-chip heterostructures will offer another degree of freedom for waveguide engineering, enabling high-performance nonlinear optical devices, such as frequency combs and quantum light sources.

Enhanced self-phase modulation in silicon nitride nanowires with integrated graphene oxide 2D films

“…Recently, the on-chip integration of two-dimensional (2D) materials with ultrahigh Kerr nonlinearity has proven to be an effective way to overcome the limitations of these existing platforms and improve their nonlinear optical performance [32][33][34][35]. Enhanced SPM has been demonstrated in integrated waveguides incorporating graphene [36][37][38], MoS 2 [39], WS 2 [40], and graphene oxide (GO) [41]. Amongst the different 2D materials, GO has shown many advantages for implementing hybrid integrated photonic devices with superior SPM performance, including a large Kerr nonlinearity (about 4 orders of magnitude higher than Si [42,43]), relatively low loss compared to other 2D materials (over 2 orders of magnitude lower than graphene [44,45]), facile synthesis processes [46,47], and high compatibility with CMOS fabrication [48,49].…”

Enhanced self-phase modulation in silicon nitride nanowires with integrated graphene oxide 2D films

“…Recently, the on-chip integration of two-dimensional (2D) materials with ultrahigh Kerr nonlinearity has proven to be an effective way to overcome the limitations of these existing platforms and improve their nonlinear optical performance [32][33][34][35]. Enhanced SPM has been demonstrated in integrated waveguides incorporating graphene [36][37][38], MoS2 [39], WS2 [40], and graphene oxide (GO) [41]. Amongst the different 2D materials, GO has shown many advantages for implementing hybrid integrated photonic devices with superior SPM performance, including a large Kerr nonlinearity (about 4 orders of magnitude higher than Si [42,43]), relatively low loss Enhanced self-phase modulation in silicon nitride nanowires with integrated graphene oxide 2D films David J. Moss S compared to other 2D materials (over 2 orders of magnitude lower than graphene [44,45]), facile synthesis processes [46,47], and high compatibility with CMOS fabrication [48,49].…”

Strongly Enhanced Self-Phase Modulation in Silicon Nitride Waveguides Integrated With Graphene Oxide 2D Films

“…Recently, the on-chip integration of two-dimensional (2D) materials with ultrahigh Kerr nonlinearity has proven to be an effective way to overcome the limitations of these existing platforms and improve their nonlinear optical performance [32][33][34][35]. Enhanced SPM has been demonstrated in integrated waveguides incorporating graphene [36][37][38], MoS2 [39], WS2 [40], and graphene oxide (GO) [41]. Amongst the different 2D materials, GO has shown many advantages for implementing hybrid integrated photonic devices with superior SPM performance, including a large Kerr nonlinearity (about 4 orders of magnitude higher than Si [42,43]), relatively low loss compared to other 2D materials (over 2 orders of magnitude lower than graphene [44,45]), facile synthesis processes [46,47], and high compatibility with CMOS fabrication [48,49].…”