Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga<sub>2</sub>O<sub>3</sub> semiconductor

Chikoidze, E.; Sartel, Corinne; Mohamed, Hagar; Madaci, Ismail; Tchelidze, Tamar; Modreanu, M.; Vales-Castro, Pablo; Rubio, Carlos; Arnold, Christophe; Sallet, Vincent; Dumont, Y.; Pérez‐Tomás, Amador

doi:10.1039/c9tc02910a

Cited by 79 publications

(67 citation statements)

References 67 publications

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“…Ga 2 O 3 is a rising star amongst emerging ultrawide bandgap semiconductors for solar blind transparent conducting electrodes [14]. Recently, Ga 2 O 3 is receiving a lot of renewed attention as a transparent semiconducting oxide champion owing to its unusual material properties [71], large tuneable n-type and p-type conductivity [72], extremely high breakdown field [73] and the availability of high crystal quality at low cost wafers (6-inch) [74]. New opportunities will arise by exploiting the Ga 2 O 3 ennabled bulk photovoltaic effect in innovative energy harvesting arrangements like sun-powered electronic converters [15] and buffering thin-film solar cells [75], [76], solaristors [21] and water splitting systems [77].…”

Section: Future Outlookmentioning

confidence: 99%

Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes

Pérez‐Tomás

Chikoidze

Dumont

et al. 2019

Materials Today Energy

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The use of ultra-wide bandgap transparent conducting beta gallium oxide (-Ga 2 O 3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes-one of them-transparent) which is not constrained by the Shockley-Queisser limit for open-circuit voltage (V oc) under typical indoor light. The solar blindness of the electrode enables a record-breaking bulk photovoltaic effect (BPE) with white light illumination (general use indoor light). This work opens up the perspective of ferroelectric photovoltaics which are not subject to the Shockley-Queisser limit by bringing into scene solar-blind conducting oxides.

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Section: Future Outlookmentioning

confidence: 99%

Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes

Pérez‐Tomás

Chikoidze

Dumont

et al. 2019

Materials Today Energy

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“…ZnRh2O4 or ZnIr2O4) [47,48] , and virtually no direct evidence of p-type conductivity (only indirectly by Hrong et al [49] to the best of our knowledge) has been reported for UWBG spinel's yet. It is worth mentioning that acceptor doping in other ultra-wide band gap (UWBG) non-spinel oxides such as monoclinic β-Ga2O3 is also still challenging [50], [51] . Therefore, the new prospects opening up by p-type ternaries such as ZnGa2O4 may represent a good opportunity to mitigate the acceptor issue in binary UWBGs.…”

Section: Introductionmentioning

confidence: 99%

p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

Chikoidze

Sartel

Madaci

et al. 2020

Crystal Growth & Design

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HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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“…Therefore, it is expected that the heterointerface manipulation and the bandgap adjustment tangibly affected the charge transfer mechanisms in the Ga 2 O 3 –TiO 2 heterointerfaces. Nitrogen as a strong acceptor can dope and diffuse into Ga 2 O 3 film and alter the charge carrier mechanism [ 30 ]. Different memristive and rectification behavior of TiO 2 –Ga 2 O 3 (N 2 ) devices can be related to different levels of N 2 incorporation into Ga 2 O 3 film at two annealing temperatures of 450 and 600 °C (XPS results in Fig.…”

Section: Resultsmentioning

confidence: 99%

Nanoscale All-Oxide-Heterostructured Bio-inspired Optoresponsive Nociceptor

Akbari

Verpoort

et al. 2020

Nano-Micro Lett.

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HIGHLIGHTS • Artificial optoelectronic nociceptor based on two-dimensional heterostructured all-oxide nanostructures was designed. • Two-dimensional heterointerfaces were functionalized, and their engineering toward fabrication of artificial nociceptors was confirmed. ABSTRACT Retina nociceptor, as a key sensory receptor, not only enables the transport of warning signals to the human central nervous system upon its exposure to noxious stimuli, but also triggers the motor response that minimizes potential sensitization. In this study, the capability of two-dimensional all-oxide-heterostructured artificial nociceptor as a single device with tunable properties was confirmed. Newly designed nociceptors utilize ultra-thin sub-stoichiometric TiO 2-Ga 2 O 3 heterostructures, where the thermally annealed Ga 2 O 3 films play the role of charge transfer controlling component. It is discovered that the phase transformation in Ga 2 O 3 is accompanied by substantial jump in conductivity, induced by thermally assisted internal redox reaction of Ga 2 O 3 nanostructure during annealing. It is also experimentally confirmed that the charge transfer in alloxide heterostructures can be tuned and controlled by the heterointerfaces manipulation. Results demonstrate that the engineering of heterointerfaces of two-dimensional (2D) films enables the fabrication of either high-sensitive TiO 2-Ga 2 O 3 (Ar) or high-threshold TiO 2-Ga 2 O 3 (N 2) nociceptors. The hypersensitive nociceptor mimics the functionalities of corneal nociceptors of human eye, whereas the delayed reaction of nociceptor is similar to high-threshold nociceptive characteristics of human sensory system. The long-term stability of 2D nociceptors demonstrates the capability of heterointerfaces engineering for effective control of charge transfer at 2D heterostructured devices.

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Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

Abstract: Strongly compensated Ga2O3 is shown to be an intrinsic (or native) p-type conductor with the largest bandgap for any reported p-type transparent semiconductor oxide which may shift the frontiers in fields such as power electronics and photonics.

Cited by 79 publications

References 67 publications

Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes

Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes

p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

Nanoscale All-Oxide-Heterostructured Bio-inspired Optoresponsive Nociceptor

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Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

Abstract: Strongly compensated Ga2O3 is shown to be an intrinsic (or native) p-type conductor with the largest bandgap for any reported p-type transparent semiconductor oxide which may shift the frontiers in fields such as power electronics and photonics.

Cited by 79 publications

References 67 publications

Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes

Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes

p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics

Nanoscale All-Oxide-Heterostructured Bio-inspired Optoresponsive Nociceptor

Contact Info

Product

Resources

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Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics