Enhancing the thermoelectric performance of GeTe through Sb doping and nanocompositing with SiC for reduced thermal conductivity

Hu, Xiaoquan; Zhang, Yu; Jiang, Yuanxin; Li, Chubin; Yang, Qishuo; Wang, Xiaoqiang; Zhang, Jiye; Li, Shuankui; Guo, Kai

doi:10.1039/d4qi00451e

Inorg. Chem. Front.

2024

DOI: 10.1039/d4qi00451e

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Enhancing the thermoelectric performance of GeTe through Sb doping and nanocompositing with SiC for reduced thermal conductivity

Xiaoquan Hu,

Yu Zhang,

Yuanxin Jiang

et al.

Abstract: Thermal conductivity () is a crucial parameter in determining the thermoelectric figure of merit, zT, for thermoelectric materials. Consequently, numerous innovative strategies have been developed in recent years to reduce...

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Boosting the Thermoelectric Properties of Ge_0.94Sb_0.06Te via Trojan Doping for High Output Power

Jiang,

Zhang,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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GeTe stands as a promising lead-free medium-temperature thermoelectric material that has garnered considerable attention in recent years. Suppressing carrier concentration by aliovalent doping in GeTe-based thermoelectrics is the most common optimization strategy due to the intrinsically high Ge vacancy concentration. However, it inevitably results in a significant deterioration of carrier mobility, which limits further improvement of the zT value. Thus, an effective Trojan doping strategy via CuScTe 2 alloying is utilized to optimize carrier concentration without intensifying charge carrier scattering by increasing the solubility of Sc in the GeTe system. Because of the high doping efficiency of the Trojan doping strategy, optimized hole concentration and high mobility are obtained. Furthermore, CuScTe 2 alloying leads to band convergence in GeTe, increasing the effective mass m* in (Ge 0.84 Sb 0.06 Te 0.9 )(CuScTe 2 ) 0.05 and thus significantly improving the Seebeck coefficient throughout the measured temperature range. Meanwhile, the achievement of the ultralow lattice thermal conductivity (κ L ∼ 0.34 W m −1 K −1 ) at 623 K is attributed to dense point defects with mass/strain-field fluctuations. Ultimately, the (Ge 0.84 Sb 0.06 Te 0.9 )(CuScTe 2 ) 0.05 sample exhibits a desirable thermoelectric performance of zT max ∼ 1.81 at 623 K and zT ave ∼ 1.01 between 300 and 723 K. This study showcases an effective doping strategy for enhancing the thermoelectric properties of GeTe-based materials by decoupling phonon and carrier scattering.

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Boosting the Thermoelectric Properties of Ge_0.94Sb_0.06Te via Trojan Doping for High Output Power

Jiang,

Zhang,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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High thermoelectric performances of monolayer GeTe allotropes

Gong,

Han,

Yang

et al. 2024

Nanotechnology

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Aiming at finding wide-temperature-zone thermoelectric (TE) materials, five kinds of monolayer GeTe allotropes including the newly designed γ-, δ-, and ɛ-GeTe monolayers and the usual α- and β-GeTe ones are constructed. By using the density functional theory and the nonequilibrium Green’s function method, all their electronic properties and TE transport properties are comparatively investigated. It is found that the room-temperature figure of merit ZT of the γ-GeTe (ɛ-GeTe) along the armchair (zigzag) direction can amount to 4.5 (3.5), which is further increased to 7.15 (5.91) at 700 K. These ZT values are much higher than the other IV–VI compounds usually with ZT < 3, indicating that the armchair γ-GeTe and the zigzag ɛ-GeTe we designed here can be used as superior wide-temperature-zone and high-performance TE materials in the temperature range from 300 K to 700 K. Moreover, with the increase of temperature, the ZT peaks will become wider in width and move towards the position of zero chemical potential, which will make the GeTe-based TE devices work at low bias voltages more efficiently. This work should be an important reference on the way to the stage of Z T ⩾ 4 , which will motivate more explorations into the high-performance TE materials working in a wider temperature scope.

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Enhancing the thermoelectric performance of GeTe through Sb doping and nanocompositing with SiC for reduced thermal conductivity

Abstract: Thermal conductivity () is a crucial parameter in determining the thermoelectric figure of merit, zT, for thermoelectric materials. Consequently, numerous innovative strategies have been developed in recent years to reduce...

Cited by 2 publications

References 48 publications

Boosting the Thermoelectric Properties of Ge_0.94Sb_0.06Te via Trojan Doping for High Output Power

Boosting the Thermoelectric Properties of Ge_0.94Sb_0.06Te via Trojan Doping for High Output Power

High thermoelectric performances of monolayer GeTe allotropes

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Enhancing the thermoelectric performance of GeTe through Sb doping and nanocompositing with SiC for reduced thermal conductivity

Abstract: Thermal conductivity () is a crucial parameter in determining the thermoelectric figure of merit, zT, for thermoelectric materials. Consequently, numerous innovative strategies have been developed in recent years to reduce...

Cited by 2 publications

References 48 publications

Boosting the Thermoelectric Properties of Ge0.94Sb0.06Te via Trojan Doping for High Output Power

Boosting the Thermoelectric Properties of Ge0.94Sb0.06Te via Trojan Doping for High Output Power

High thermoelectric performances of monolayer GeTe allotropes

Contact Info

Product

Resources

About

Boosting the Thermoelectric Properties of Ge_0.94Sb_0.06Te via Trojan Doping for High Output Power

Boosting the Thermoelectric Properties of Ge_0.94Sb_0.06Te via Trojan Doping for High Output Power