Environmentally Robust Memristor Enabled by Lead‐Free Double Perovskite for High‐Performance Information Storage

Cheng, Xue‐Feng; Qian, Wen‐Hu; Wang, Jia; Yu, Chuang; He, Jinghui; Li, Hua; Xu, Qingfeng; Chen, Dongyun; Li, Najun; Lu, Jianmei

doi:10.1002/smll.201905731

Cited by 152 publications

(93 citation statements)

References 67 publications

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“… 16 Additionally, it has been applied in X-ray detectors 17 and memristors. 18 The optoelectronic properties of Cs 2 AgBiBr 6 stimulated the development of low-dimensional (i.e., 2D) perovskites from their 3D counterparts by the introduction of large A-site cations. These layered double perovskites feature many interesting properties, for example, the transition from an indirect to a direct band gap material by tuning the number of adjacent octahedra layers.…”

mentioning

confidence: 99%

Phase Transitions in Low-Dimensional Layered Double Perovskites: The Role of the Organic Moieties

Martín‐García

Spirito

Biffi

et al. 2020

J. Phys. Chem. Lett.

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Halide double perovskites are an interesting alternative to Pb-containing counterparts as active materials in optoelectronic devices. Low-dimensional double perovskites are fabricated by introducing large organic cations, resulting in organic/inorganic architectures with one or more inorganic octahedra layers separated by organic cations. Here, we synthesized layered double perovskites based on 3D Cs 2 AgBiBr 6 , consisting of double (2L) or single (1L) inorganic octahedra layers, using ammonium cations of different sizes and chemical structures. Temperature-dependent Raman spectroscopy revealed phase transition signatures in both inorganic lattice and organic moieties by detecting variations in their vibrational modes. Changes in the conformational arrangement of the organic cations to an ordered state coincided with a phase transition in the 1L systems with the shortest ammonium moieties. Significant changes of photoluminescence intensity observed around the transition temperature suggest that optical properties may be affected by the octahedral tilts emerging at the phase transition.

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mentioning

confidence: 99%

Phase Transitions in Low-Dimensional Layered Double Perovskites: The Role of the Organic Moieties

Martín‐García

Spirito

Biffi

et al. 2020

J. Phys. Chem. Lett.

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“…[ 135,155–158 ] Recently, Cheng et al reported environmentally robust memristors based on lead‐free double perovskite Cs 2 AgBiBr 6 , which remained robust in harsh environments, including humidity as high as 80%, temperatures up to 180 °C, an alcohol burner flame lasting 10 s, and 60 Co γ‐ray irradiation for a dosage of 5 × 10 5 rad (SI). [ 157 ] This robustness stems from the high formation energy and good crystallinity of Cs 2 AgBiBr 6 . The memristors based on graphene/MoS 2‐ x O x /graphene vdW heterostructures were demonstrated to maintain stable resistive switching at a temperature as high as 340 °C, [ 135 ] which is the highest operating temperature reported so far.…”

Section: Key Requirements and Progress For Large‐scale Memristor Cbasmentioning

confidence: 99%

Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays

Ang

2020

Advanced Intelligent Systems

137

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Brain‐inspired neuromorphic computing is a new paradigm that holds great potential to overcome the intrinsic energy and speed issues of traditional von Neumann based computing architecture. With the ability to perform vector‐matrix multiplications and flexible tunable conductance, the memristor crossbar array (CBA) structure is one of the most promising candidates to realize neural cognitive systems. The boom in the development of memristive synapses and neurons has propelled the developments of artificial neural networks (ANNs) to emulate the highly hierarchically organized network of human brain in the past decade. To achieve this, realizing large scale, high‐density memristive CBAs is a prerequisite to constructing complex ANNs. Herein, the stringent requirements in device performance and array parameters for hardware ANNs are analyzed, and the efforts in addressing the associated challenges are discussed. Recent progress on the experimental demonstration of neuromorphic computing systems (NCSs) is presented. Recommendations for further performance optimization at the device, circuit, and algorithm levels are proposed. This Report serves as a guide for the hardware implementation of NCS based on large‐scale CBAs.

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“…Therefore, they are selected to use in resorbable, degradable, and compatible applications. Furthermore, great efforts have been devoted to exploring new inorganic materials such as perovskite for environmental applications, especially halide perovskite [33,[76][77][78][79][80][81]. Some researches indicate that halide perovskite materials can also be utilized for various applications in terms of environmental protection, for instance, environmental-friendly sensors, disposable consumer devices, and green electronics [77,[80][81][82].…”

Section: Inorganic Thin-film Materialsmentioning

confidence: 99%

Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

et al. 2020

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Featured Application: Thin-film materials with degradability and recyclability for the fabrication of degradable, dissolvable, resorbable, and/or compatible electronic devices, especially transient resistive switching devices for security information storage and neuromorphic computing as well as environmental-friendly applications.Abstract: The environmental pollution generated by electronic waste (e-waste), waste-gas, and wastewater restricts the sustainable development of society. Environmental-friendly electronics made of degradable, resorbable, and compatible thin-film materials were utilized and explored, which was beneficial for e-waste dissolution and sustainable development. In this paper, we present a literature review about the development of various degradable and disposable thin-films for electronic applications. The corresponding preparation methods were simply reviewed and one of the most exciting and promising methods was discussed: Printing electronics technology. After a short introduction, detailed applications in the environment sensors and eco-friendly devices based on these degradable and compatible thin-films were mainly reviewed, finalizing with the main conclusions and promising perspectives. Furthermore, the future on these upcoming environmental-friendly electronic devices are proposed and prospected, especially on resistive switching devices, showing great potential applications in artificial intelligence (AI) and the Internet of Thing (IoT). These resistive switching devices combine the functions of storage and computations, which can complement the off-shelf computing based on the von Neumann architecture and advance the development of the AI.

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Environmentally Robust Memristor Enabled by Lead‐Free Double Perovskite for High‐Performance Information Storage

Cited by 152 publications

References 67 publications

Phase Transitions in Low-Dimensional Layered Double Perovskites: The Role of the Organic Moieties

Phase Transitions in Low-Dimensional Layered Double Perovskites: The Role of the Organic Moieties

Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays

Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

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