Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors

Kang, B. S.; Wang, H. T.; Ren, F.; Pearton, S. J.; Morey, Timothy E.; Dennis, Donn M.; Johnson, J. W.; Rajagopal, P.; Roberts, John C.; Piner, E. L.; Linthicum, K. J.

doi:10.1063/1.2825574

Cited by 127 publications

(73 citation statements)

References 26 publications

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“…HEMTs with high 2D electron gas (2DEG) mobility and saturation velocity have been applied in sensing platforms [124][125][126][127][128]. Slight ambient changes affect the surface charges of the HEMT during detection, which are transduced into a change in 2DEG concentration.…”

Section: High Electron Mobility Transistors (Hemts)mentioning

confidence: 99%

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ZnO nanostructures in enzyme biosensors

et al. 2015

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Biosensing has developed tremendously since it was demonstrated by Leland C. Clark Jr. in 1962. ZnO nanomaterials are attractive candidates for fabricating biosensors, because of their diverse range of nanostructures, high electron mobility, chemical stability, electrochemical activity, high isoelectric points which promote enzyme adsorption, biocompatibility, and piezoelectric properties. This review covers ZnO nanostructures applied in enzyme biosensors, in the light of electrochemical transduction and field effect transduction. Different assembly processes and immobilization methods have been used to load enzymes into various ZnO nanostructures, providing enzymes with favorable micro-environments and enhancing their sensing performance. We briefly describe recent trends in ZnO syntheses, and the analytical performance of the fabricated biosensors, summarize the advantages of using ZnO nanostructures in biosensors, and conclude with future challenges and prospects.

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Section: High Electron Mobility Transistors (Hemts)mentioning

confidence: 99%

“…The channel was induced by piezoelectric and spontaneous polarization between the AlGaN and GaN layers [125]. To immobilize GOx, the ZnO nanorod array was selectively grown on the gate area, through low temperature hydrothermal decomposition.…”

Section: High Electron Mobility Transistors (Hemts)mentioning

confidence: 99%

ZnO nanostructures in enzyme biosensors

et al. 2015

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“…These sensors can be re-used after by rinsing in PBS (phosphate buffer saline) wash In a similar fashion, both Prostate Specific Antigen (PSA) (8) and breast cancer markers (c-erbB-2) (9) in saliva have been detected at clinically relevant concentrations using HEMTs functionalized with the relevant antibodies. Other biomarkers detected in breath condensate include glucose (10) and pH, as well as lactic acid, traumatic brain injury, kidney injury molecules (11) , chlorine ions (based on either InN films or AgCl deposited in the gate region) (12) and DNA in buffer solutions. Both Hg and Cu ions can be detected using appropriate functionalization and these sensors are also re-uable after washing (13,14) .…”

Section: Examples Of Gan-based Biosensorsmentioning

confidence: 99%

(The Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology Award) Wide Bandgap Semiconductors for Electronics, Photonics, and Sensing Applications

Pearton¹,

Ren²

2011

ECS Trans.

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Recent progress in development of GaN-based transistors for gas and bio-sensing applications and amorphous IGZO layers for use thin film transistors (TFTs) on flexible substrates, including paper, is presented. For the detection of gases such as hydrogen, the gateless GaN transistors are typically coated with a catalyst metal such as Pd to increase the detection sensitivity at room temperature. Functionalizing the surface with oxides, polymers and nitrides enhances the detection sensitivity for gases and ionic solutions. The use of enzymes or antibody layers on the surface leads to highly specific detection of a range of antigens of interest in the medical and security fields. We give examples showing sensitive detection of glucose, prostate cancer and breast cancer markers and the integration of the sensors with wireless data transmission systems. The amorphous transparent conducting oxide InZnGaO 4 (IGZO) is attracting attention because of its high electron mobility, high transparency in the visible region and its ability to be deposited with a wide range of conductivities. This raises the possibility of making low-cost electronics on a range of arbitrary surfaces, including paper and plastics. Remaining obstacles to use of IGZO TFTs are presented. Applications of GaN Based Electronics and PhotonicsOn the photonics side, the AlGaInN materials system, consisting of the AlGaN/GaN, InAlN/GaN and InGaN/GaN heterostructures and the GaN,AlN and InN binaries is widely used in blue/violet/white/UV light emitting diodes for stoplights and full color displays, blue and green lasers for use in high density CD-ROM storage and high resolution printers. The main applications for GaN-based high power microwave transistors is in phased array radar systems and wireless communication systems, while the low noise, radiation hard transistors can be used in high temperature sensors and space-flight instrumentation (1)

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“…Compared to methods such as protein assays [2], there is no need for optical components to translate the surface binding phenomena into a readable signal. Semiconductor properties including, surface current, potential, and impedance characteristics can be used to directly measure chemical or physical stimuli on the semiconductor surface [3][4][5][6][7][8][9][10]. Handheld, wireless-capable medical sensors are attractive for reducing financial and emotional cost of false-positive tests.…”

Section: Introductionmentioning

confidence: 99%