Epitaxial and non-epitaxial large area GaSb-based thermophotovoltaic (TPV) cells

Rahimi, Nassim; Henera, Daniel J.; Abdallah, Shaimaa A.; Stelmakh, Veronika; Chan, Walker R.; Čelanović, Ivan; Lester, L. F.

doi:10.1109/pvsc.2015.7356082

Cited by 3 publications

(3 citation statements)

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“…This causes a non-uniform p-n junction formation due to different thicknesses of the active region. Rahimi et al [ 59 ] demonstrated that the Be-implanted GaSb exhibits similar performance to the MBE-grown GaSb TPV cell. To achieve this, the implanted dopants on the semiconductor substrate must undergo a rapid thermal annealing (RTA) process where the cell is exposed to a high temperature to remove the implant-induced damage and therefore achieving a higher shunt resistance [ 55 , 60 ].…”

Section: Tpv Cell Fabricationmentioning

confidence: 99%

“…However, a GaSb structure grown over a large area is challenging due to the difficulty of finding an epi-ready substrate, non-uniform native oxide desorption, and shunt defect formation. A key advantage of using the MBE method to grow TPV cell is the generation of a higher

when compared to the MOVPE and LPE methods [ 59 , 80 ]. Table 1 provides a summary of characteristics, advantages and disadvantages for different types of TPV cell growth methods.…”

Section: Tpv Cell Fabricationmentioning

confidence: 99%

“…Several studies have made comparisons between epitaxially grown and non-epitaxially grown (ion-implantation and diffusion) GaSb TPV cells. For example, Martin et al [ 132 ] and Rahimi et al [ 59 ] compared the performance of epitaxial and non-epitaxial GaSb TPV cells. Rahimi emphasized that an annealing process removed implant-induced damage crystal on GaSb devices, resulting in comparable device quality with epitaxially grown GaSb TPV cell.…”

Section: Gasb-based Tpv Cellmentioning

confidence: 99%

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A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency.

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Section: Tpv Cell Fabricationmentioning

confidence: 99%

when compared to the MOVPE and LPE methods [ 59 , 80 ]. Table 1 provides a summary of characteristics, advantages and disadvantages for different types of TPV cell growth methods.…”

Section: Tpv Cell Fabricationmentioning

confidence: 99%