Epitaxial growth and magnetic properties of half-metallic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Fe</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>on GaAs(100)

Lu, Yongxiong; Claydon, J. S.; Xu, Yongbing; Thompson, Sarah; Wilson, Karen; Laan, G. van der

doi:10.1103/physrevb.70.233304

Cited by 88 publications

(73 citation statements)

References 23 publications

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“…The RHEED patterns ͓Figs. 1͑c͒ and 1͑d͔͒ are similar to those observed 10,11 12 although the large lattice mismatch of 5% probably leads to films of quality inferior to the present case. However, even a lattice mismatch of 1.9% is not expected to yield the sharp and streaky patterns we observe in Figs.…”

supporting

confidence: 71%

High quality Fe3−δO4∕InAs hybrid structure for electrical spin injection

Ferhat

Yoh²

2007

Applied Physics Letters

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Single crystalline Fe 3−␦ O 4 ͑0 ഛ ␦ ഛ 0.33͒ films have been epitaxially grown on InAs ͑001͒ substrates by molecular beam epitaxy using O 2 as source of active oxygen. Under optimum growth conditions, in situ real time reflection high-energy electron diffraction patterns, along with ex situ atomic force microscopy, indicate that ͑001͒ Fe 3−␦ O 4 can be grown under step-flow-growth mode with a characteristic ͑ ͱ 2 ϫ ͱ 2͒R45 surface reconstruction. X-ray photoelectron spectroscopy demonstrates the possibility of obtaining iron oxides with compositions ranging from Fe 3 O 4 to ␥-Fe 2 O 3 . Measurements with a superconducting quantum interference device magnetometer at 300 K show good magnetic properties, suggesting that iron-based oxides may be promising for spintronic applications. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2713784͔ During the last decade, there has been a considerable increase of studies on hybrid structures combining both semiconductors and magnetic materials. These studies are motivated by possible applications in the nascent field of spintronics, since the electron spin degree of freedom in hybrid structures is believed to be a source of a rich array of new physical phenomena. Different approaches have been adopted for the selection of adequate spin injectors including ferromagnetic metals, 1,2 dilute magnetic semiconductors, 3 and Heusler alloys. 4 The use of magnetic semiconductors in this field presents the formidable task of increasing the Curie temperature. Ferromagnetic metal and Heusler alloys on the other hand suffer from structural and interfacial problems during their growth. Quite surprisingly, there are few reports on iron oxide based half metals, which exhibit a large polarization at the Fermi level making them very attractive for spin injection into semiconductors.Fe 3 O 4 or magnetite belongs to a large family of ironbased oxides commonly called ferrites. Our choice for this material as a possible efficient spin injector into semiconductors stems from its physical properties, which are attractive in many respects. ͑i͒ It has half metallic character with a large spin polarization at the Fermi level. 5,6 ͑ii͒ It possesses an electrical resistivity of the same order of magnitude as a semiconductor, making the conductivity mismatch problem less severe than in the case of metals. ͑iii͒ It has a Curie temperature of about 850 K, well above room temperature. This study will combine the use of magnetite with InAs substrates. InAs is used because of high room temperature electron mobility and, more importantly, because of its large and tunable spin-orbit coupling strength ͑small ratio between the Rashba and Dresselhauss terms͒, important for spin-based devices. 7 Although the growth of iron oxides on metallic and oxide based substrates is a very well documented subject, 8 there are only few reports on the growth of iron oxides on semiconducting substrates.The purpose of the present letter is to extend the only work available 9 on the growth of Fe 3 O 4 on InAs with special emp...

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supporting

confidence: 71%

High quality Fe3−δO4∕InAs hybrid structure for electrical spin injection

Ferhat

Yoh²

2007

Applied Physics Letters

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“…Also for Fe a good fit to our measurements is obtained with the parameters given in sec- in the octahedral sites (as in Fe 3 O 4 ) are found, such as a shoulder at the onset of the L 3 and L 2 XAS spectra, a much larger negative first peak in the L 3 XMCD spectrum or a positive peak at the onset of the L 3 XMLD spectrum. 17,45 The corresponding positions are marked by arrows in FIG. 8.…”

Section: Cation Distribution and Element Resolved Magnetic Momentsmentioning

confidence: 99%

Physical characteristics and cation distribution of NiFe2O4 thin films with high resistivity prepared by reactive co-sputtering

Klewe¹,

Meinert²,

Boehnke³

et al. 2014

Journal of Applied Physics

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We fabricated NiFe 2 O 4 thin films on MgAl 2 O 4 (001) substrates by reactive dc magnetron co-sputtering in a pure oxygen atmosphere at different substrate temperatures. The film properties were investigated by various techniques with a focus on their structure, surface topography, magnetic characteristics, and transport properties. Structural analysis revealed a good crystallization with epitaxial growth and low roughness and a similar quality as in films grown by pulsed laser deposition. Electrical conductivity measurements showed high room temperature resistivity (12 Ωm), but low activation energy, indicating an extrinsic transport mechanism. A band gap of about 1.55 eV was found by optical spectroscopy. Detailed x-ray spectroscopy studies confirmed the samples to be ferrimagnetic with fully compensated Fe moments. By comparison with multiplet calculations of the spectra we found that the cation valencies are to a large extent Ni 2+ and Fe 3+ .

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“…In a previous paper [6], we reported the very first synthesis of epitaxial Fe O on GaAs(100) by post-growth oxidation. Furthermore, we have also reported that half-metallic Fe O nanostripes can be generated on deformed GaAs(100) [7].…”

mentioning

confidence: 99%

Annealing induced Fe oxide nanostructures on GaAs

Ahmad

et al. 2005

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.

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We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre-and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy. These nanostripes exhibited uniaxial magnetic anisotropy. The formation of these nanostructures is attributed to surface anisotropy, which in addition could explain the observed uniaxial magnetic anisotropy.

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Epitaxial growth and magnetic properties of half-metallicFe3O4on GaAs(100)

Cited by 88 publications

References 23 publications

High quality Fe3−δO4∕InAs hybrid structure for electrical spin injection

High quality Fe3−δO4∕InAs hybrid structure for electrical spin injection

Physical characteristics and cation distribution of NiFe2O4 thin films with high resistivity prepared by reactive co-sputtering

Annealing induced Fe oxide nanostructures on GaAs

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