Epitaxial Growth and Solar‐Blind Photoelectric Characteristic of Ga₂O₃ Film on Various Oriented Sapphire Substrates by Plasma‐Enhanced Chemical Vapor Deposition

Abstract

The epitaxial growth of Ga2O3 thin films is important for their applications in electronic and optoelectronic devices. Herein, the growth of Ga2O3 thin films on various oriented (c‐, a‐, m‐, r‐plane) sapphire substrates by plasma‐enhanced chemical vapor deposition (PECVD) is investigated using high purity metallic Ga and oxygen (O2) as precursor materials and argon (Ar) as carrier gas under a relatively lower growth temperature compared with other CVD methods. The effects of the substrates orientation to the surface morphology, crystal orientation, growth rate, optical properties, and solar‐blind photoelectric properties of Ga2O3 thin films are studied. The epitaxial film grown on the c‐plane sapphire substrate exhibits the best crystallinity and smooth surface, while that grown on the r‐plane shows the fastest growth rate of 1.97 μm h−1. The photodetector based on the Ga2O3 film grown on the c‐plane exhibits the lowest dark current of 0.17 nA, the highest Ilight/Idark ratio of 242.47, and the fastest response time of 0.31 s, while that of grown on the m‐plane shows the highest responsivity (Rλ) of 27.71 mA W−1.

Boosting the Performance of β‐Ga2O3 Solar‐Blind Deep UV Photodetectors by Balancing the Photocurrent and Dark Current via the IZO Interlayer

“…The device with 10 nm IZO and Ti (60 nm)/ Au (120 nm) was named IZO/Ti/Au, and the annealing temperature was shown in the figure. The R as shown in Figure 5a is calculated by the next formula [6,20,21]…”

“…The true mid-UV response nature of Ga 2 O 3 -based photodetectors (PDs) means that they do not require any supplementary filters, which are different from other devices such as that based on GaAs or Si. Moreover, as Ga 2 O 3 -based PDs exhibit cutoff wavelengths below 280 nm, they are appropriate for solar-blind deep UV detection, [4][5][6] thus facilitating its application in the area of the solar-blind PD (SBPD). [5,6] To obtain excellent performance devices, high-quality Ga 2 O 3 materials are essential.…”

“…Moreover, as Ga 2 O 3 -based PDs exhibit cutoff wavelengths below 280 nm, they are appropriate for solar-blind deep UV detection, [4][5][6] thus facilitating its application in the area of the solar-blind PD (SBPD). [5,6] To obtain excellent performance devices, high-quality Ga 2 O 3 materials are essential. There are many Ga 2 O 3 growth methods, such as metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy, and physical vapor deposition methods.…”

Deposition of Ga2O3 thin films by liquid metal target sputtering

“…The known methods of Ga2O3 thin film deposition include metal-organic chemical vapor deposition [16], plasma-enhanced chemical vapor deposition [17], molecular beam epitaxy [18], atomic layer deposition [19], pulsed laser deposition [20], e-beam evaporation [9], and radio-frequency (RF) magnetron sputtering (MS) from ceramic Ga2O3 targets [21]. While MS is generally known for highquality coatings produced under well controlled and reproducible conditions [22][23][24], the drawback of the RF mode of sputtering is its impractically low sputtering rate.…”

Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation

“…While not new to the scientific community, gallium oxide grasped the attention of many researchers in the past two decades. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] The reason for much of the interest lies in this material's potential for offering solutions to challenges in niche markets. No perfect semiconductor exists for every application.…”