Epitaxial growth of graphene thin film by pulsed laser deposition

Abstract

Epitaxial graphene films have been prepared by pulsed laser deposition. X-ray photoelectron spectroscopy analysis shows that the carbon binding energy is 284.7 eV, corresponding to sp 2-C. Raman spectroscopy indicates that there exists 2D and D peaks and thus graphene structures have been formed. Meanwhile, according to high-resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the single oriented crystal domains of graphene are observed only with the condition of 100 pulses laser.

Progress in pulsed laser deposited two-dimensional layered materials for device applications

“…As the CVD methods require a long growth time and high temperature, researchers started to consider growing graphene on metal substrates using PLD as an alternative to CVD. [69][70][71][72][73][74] At an early stage, Koh et al grew graphene with a few layers (o5 layers) on Ni (600 nm)/Si substrate using PLD. 69 They studied the influence of cooling rate and laser energy on the formation and quality of the graphene layers.…”

Observation of dark and bright pulses in q-switched erbium doped fiber laser using graphene nano-platelets as saturable absorber

“…The number of layers of which the graphite is peeled off is also random and cannot be controlled. There is also a method using insulating surfaces for epitaxial growth [9]. The third was CVD on metals such as Ni [10] and Cu [11] and epitaxial growth on certain facet of metal such as ruthenium (0001) [12].…”

Facile fabrication of superparamagnetic graphene/polyaniline/Fe3O4 nanocomposites for fast magnetic separation and efficient removal of dye

“…The large theoretical specific surface area of graphene (about 2630 m 2 g −1 ) and the abundant functional groups of graphene oxide (GO) make them potential to be used for removal of heavy metal ions and organic pollutants 3 , 4 . Currently, several strategies have been employed to prepare GO, including “Scotch tape” method 5 , chemical vapor deposition 6 , epitaxial growth on substrates 7 , exfoliation from expanded graphite 8 and Hummers’ method 9 . Among them, chemical exfoliation method has been frequently used for large-scale production of graphene 10 , because the other methods have drawbacks such as high cost, low yield and harsh reaction conditions (i.e., high temperature and vacuum) 11 , 12 .…”