Epitaxial PbTiO3 thin films grown on (100) MgO by pulsed-laser deposition for optical waveguiding properties

Roemer, Anne; Millon, Éric; Vincent, Brice; Boudrioua, Azzedine; Pons-Y-Moll, Olivier; Defourneau, R.M.; Seiler, Wilfrid

doi:10.1063/1.1649461

Cited by 28 publications

(15 citation statements)

References 30 publications

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“…What is more, a c depends on the deposition conditions, e.g. on the cooling pace [77] or on oxygen partial pressure for pulsed laser deposited films [78]. If an increase of a c with thickness has been reported [79], most the experiments tend to show that a c decreases with thickness [76,80,81]; On the contrary, its evolution with temperature makes a consensus: the decrease of a c with temperature has been observed [74,79,82,83] as well as calculated [84,82].…”

Section: Domain Stability Mapmentioning

confidence: 88%

Strain on ferroelectric thin films

Janolin

2009

J Mater Sci

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Strain engineering aims to take advantage of the stress field imposed by substrates on thin films. It requires an understanding of the consequences of stress fields on the physical properties of the deposited materials. This is achieved in ferroelectric thin films through the use of misfit-strain phase diagrams that show the stability regions for the possible phases. These encompass bulk phases as well as new ones exhibiting symmetries that are not present in the bulk. For the solid solution lead zirconate-lead titanate, Pb(Zr 1-x Ti x )O 3 , monoclinic phases found in the bulk morphotropic phase boundary region and associated to concentrations exhibiting the highest properties can be stabilized on a wider range of composition in thin films. In addition, phases of lower symmetry can be stabilized through the use of anisotropic biaxial stress fields, generated by orthorhombic substrates for example. Another crucial aspect of the influence of biaxial stress fields is the generation of domain structures. Theoretical tools as well as experimental verifications have provided much insight on the underlying physics. We, therefore, present here an overview of the influence of both iso-and anisotropic biaxial stress fields on the structures and properties of ferroelectric thin films exemplified on Pb(Zr 1-x Ti x )O 3 .

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Section: Domain Stability Mapmentioning

confidence: 88%

Strain on ferroelectric thin films

Janolin

2009

J Mater Sci

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“…PLD is a method particularly adapted for the growth of complex oxide films [20,21]. TiO 2 thin films doped Nd 3+ were grown by PLD with a KrF Lambda Physics Compex 201 laser (248 nm, 27 ns, 20 Hz pulses).…”

Section: Methodsmentioning

confidence: 99%

UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application

et al. 2012

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is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. (0 0 4) anatase. An UV to NIR photon conversion is evidenced in the films. Indeed, intense and wellresolved emission lines from Nd 3+ have been observed upon excitation above the TiO 2 bandgap at room temperature. The sensitised emission of Nd 3+ is found to be much efficient in rutile than in anatase structure. Low temperature photoluminescence measurements lead to fine resolved peaks corresponding to the Nd 3+ 4f transitions with different spectral characteristic according to the host matrix used. Photoluminescence dependence temperature evidences that the light emission from Nd 3+ in anatase-based films is probably influenced by the presence of self-trapped excitons or by orbital interaction. Mechanisms of sensitisation host to Nd 3+ are proposed for both matrixes. Finally, the Nd dopant concentration and the microstructure of TiO 2 rutile films are found to affect the photoluminescence emission intensity. Rutile film (2 0 0) oriented is the most adapted host matrix to sensitise 1 at.% Nd 3+ ions for an emission around 1064 nm making such Nd-doped layers interesting for photon conversion by down shifting process.

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“…These results indicate that the reappearance of the pyrochlore phase at higher deposition temperatures is due to lead deficiency. This tendency is often observed for Pb-based complex perovskite compounds, where Pb deficiency due to lead volatilization or re-evaporation is attributed to promote the formation of the pyrochlore phase [17][18][19][20]. Fig.…”

Section: Resultsmentioning

confidence: 91%

Epitaxial growth and structural characterization of Pb(Fe1/2Nb1/2)O3 thin films

Peng

Lemée

Holc

et al. 2009

Journal of Magnetism and Magnetic Materials

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a b s t r a c tWe have grown lead iron niobate thin films with composition Pb(Fe 1/2 Nb 1/2 )O 3 (PFN) on (0 0 1) SrTiO 3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar thermodynamic stability spaces, a pyrochlore phase often coexists with the PFN perovskite phase. By optimizing the kinetic parameters, we succeeded in identifying a deposition window which resulted in epitaxial perovskite-phase PFN thin films with no identifiable trace of impurity phases appearing in the X-ray diffractograms. PFN films having thicknesses between 20 and 200 nm were smooth and epitaxially oriented with the substrate and as demonstrated by RHEED streaks which were aligned with the substrate axes. X-ray diffraction showed that the films were completely caxis oriented and of excellent crystalline quality with low mosaicity (X-ray rocking curve FWHMp0.091). The surface roughness of thin films was also investigated by atomic force microscopy. The root-mean-square roughness varies between 0.9 nm for 50-nm-thick films to 16 nm for 100-nmthick films. We also observe a correlation between grain size, surface roughness and film thickness.

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Epitaxial PbTiO3 thin films grown on (100) MgO by pulsed-laser deposition for optical waveguiding properties

Cited by 28 publications

References 30 publications

Strain on ferroelectric thin films

Strain on ferroelectric thin films

UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application

Epitaxial growth and structural characterization of Pb(Fe1/2Nb1/2)O3 thin films

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