Epitaxial Silicon Thin Films

Miller, Kenneth J.; Manz, R. C.; Grieco, Michael J.

doi:10.1149/1.2425515

Cited by 7 publications

(4 citation statements)

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“…The heat of formation for silane at these temperatures is about one order of magnitude lower than that for silicon tetrachloride (8,9).…”

Section: Apparatus and Techniquesmentioning

confidence: 79%

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Silicon Epitaxial Layers with Abrupt Interface Impurity Profiles

Gupta¹,

Yee²

1969

J. Electrochem. Soc.

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Silicon epitaxial layers of good quality have been deposited on silicon substrates by the pyrolysis of silane at low temperatures. Studies to minimize the degradation of the impurity profile of an epitaxial silicon layer caused by various sources or processes are reported. Auto doping and system doping during deposition have been minimized by using techniques such as sealing the backsides of the substrates, sealing the susceptor, and using two-temperature cycle depositions. Impurity profiles of the layers deposited by the above methods are compared with the profiles of the layers obtained from more conventional deposition conditions.

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“…The heat of formation for silane at these temperatures is about one order of magnitude lower than that for silicon tetrachloride (8,9).…”

Section: Apparatus and Techniquesmentioning

confidence: 79%

“…Several papers have reported relevant work on the components of the pseudobinary phase diagram ZnSnAs2 (1-4, [9][10][11][12][13][14] and CdSnAs~ (4,5,9,10,15,16).…”

Section: Appendixmentioning

confidence: 99%

Silicon Epitaxial Layers with Abrupt Interface Impurity Profiles

Gupta¹,

Yee²

1969

J. Electrochem. Soc.

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“…The apparatus used for substrate etching and epitaxial deposition was similar to that previously reported (4,5). The HC1 gas used for etching was prepared in the laboratory by dropping chemically pure concentrated aqueous HC1 into chemically pure concentrated H2SO4 (6).…”

Section: Methodsmentioning

confidence: 99%

A Study of HCl-H[sub 2] and GeCl[sub 4]-H[sub 2] Etching of Germanium Substrates for Epitaxial Deposition

Miller¹,

Grieco²

1964

J. Electrochem. Soc.

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As part of an investigation of in situ etching of germanium substrates in a reaction chamber, prior to epitaxial deposition, a study was made of the kinetics and reaction chemistry of the Ge-HC1 and Ge-GeC14 etch reactions taking place in flowing hydrogen. Recent work has been reported on the in situ gas phase etching of silicon and germanium samples by Bean and Gleim (1), Lang and Stavish (2), and Amick et al. (3). The latter authors have reported in detail on the substrate texture obtained by gas phase etching prior to epitaxial deposition.

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“…Film deposition.--The deposition apparatus used was similar to that previously reported (8). The hydrogen gas halide saturator was used in this study with the hydrogen flow over the surface of the liquid, which was stirred with a glass-encapsulated magnetic stirrer.…”

Section: Methodsmentioning

confidence: 99%