Equipotential distribution in the quantum Hall effect

Sichel, E. K.; Sample, HH; Salerno, JP

doi:10.1103/physrevb.32.6975

Cited by 39 publications

(4 citation statements)

References 13 publications

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“…Experiments aimed at measuring the electrostatic potential distribution were originally carried out by attaching contacts to the interior of the Hall bar and measuring the voltage differences between adjacent contacts. 456,457,458,459,460 It was learned from these studies that relatively small inhomogeneities in the density of the 2DEG have a large effect on these voltage differences in the QHE regime. The main difficulty in the interpretation of such experiments is that the voltage difference measured between two contacts is the difference in electrochemical potential, not the line integral of the electric field.…”

Section: Current Distributionmentioning

confidence: 99%

Quantum Transport in Semiconductor Nanostructures

Beenakker

Houten

1991

Solid State Physics

1,113

724

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I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).Comment: 111 pages including 109 figures; this review from 1991 has retained much of its usefulness, but it was not yet available electronicall

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Section: Current Distributionmentioning

confidence: 99%

Quantum Transport in Semiconductor Nanostructures

Beenakker

Houten

1991

Solid State Physics

1,113

724

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“…The first experimental method used to measure the current distribution was the direct electrical measurement of the potential distribution by placing a series of metallic contacts in the interior of a Hall bar device [136][137][138]. Outside the plateau regions, it was found that the current distribution varies more or less linearly across the device.…”

Section: Current Distributionmentioning

confidence: 99%

The quantum Hall effect as an electrical resistance standard

2001

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The quantum Hall effect (QHE) provides an invariant reference for resistance linked to natural constants. It is used worldwide to maintain and compare the unit of resistance. The reproducibility reached today is almost two orders of magnitude better than the uncertainty of the determination of the ohm in the International System of Units SI. This article is a summary of a recently published review article which focuses mainly on the aspects of the QHE relevant for its metrological application.

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“…<en -1)2(8 1 8 2 8, + 8 5 0 6 8, + 8 3 6 4 8 5 + 8 7 8 8 8 1 )/2 from relations (26) and (27). This relation is valid only when the effect of unequal population of edge channels produced by the nonuniform 2D EG is negligibly small compared to that produced by contacts.…”

Section: Influence Of Inhomogeneity In a 2d Egmentioning

confidence: 92%

A contact limited precision of the quantized Hall resistance

Hirai

Komiyama

1990

Journal of Applied Physics

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A four-terminal Hall resistance is analyzed using the Biittiker formalism of contacts. The possible maximum deviation of a quantized Hall resistance from ideal values ~n a multi terminal device is shown to be limited by the resistances of contacts. A general expressiOn for the possible maximum deviation is derived for a multiterminaI configuration with an arbitrary number of terminals in the condition of an arbitrary (integer) number of filled Landau levels. The influence of an inhomogeneous two-dimensional electron gas on the Hall resistan.ce is also discussed.

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Equipotential distribution in the quantum Hall effect

Cited by 39 publications

References 13 publications

Quantum Transport in Semiconductor Nanostructures

Quantum Transport in Semiconductor Nanostructures

The quantum Hall effect as an electrical resistance standard

A contact limited precision of the quantized Hall resistance

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