Erratum: Hydrodynamically enhanced thermal transport due to strong interlayer interactions: A case study of strained bilayer graphene [Phys. Rev. B 105, 125406 (2022)]

Duan, Fuqing; Chen, Shen; Zhang, Hongbin

doi:10.1103/physrevb.106.079902

Cited by 4 publications

(6 citation statements)

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“…For instance, the κ l value of Ge 2 Sb 2 Se 4 Te along the x -axis calculated by RTA and ITE methods is 3.73 and 4.45 W/mK, respectively. The three-phonon scattering process can be divided into the Normal process (N process) and the Umklapp process (U process), where the N process phonon collision before and after the system quasi-momentum remains constant, and has no effect on the heat flow . Nevertheless, the U process phonon collision before and after the system momentum is not conserved, blocking the heat transfer.…”

Section: Resultsmentioning

confidence: 99%

“…The three-phonon scattering process can be divided into the Normal process (N process) and the Umklapp process (U process), where the N process phonon collision before and after the system quasi-momentum remains constant, and has no effect on the heat flow. 49 Nevertheless, the U process phonon collision before and after the system momentum is not conserved, blocking the heat transfer. Such discrepancy among results calculated by the ITE method and RTA method is due to the RTA method treating the normal scattering process as resistance and neglecting its significant role in the hydrodynamic phonon transport.…”

Section: Mechanical Propertiesmentioning

confidence: 99%

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Systematic Study on Electronic, Mechanical, and Thermal Transport Properties of Germanium Antimony Selenide Telluride Alloy by a First-Principles Approach

Lian,

Li,

Liu

et al. 2023

ACS Appl. Energy Mater.

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Ge 2 Sb 2 Se 4 Te alloy has most recently exhibited its outstanding optical properties for non-volatile photonic storage applications, while its electrical and thermal transport properties were rarely reported, thus limiting its application versatility. To overcome the above issue, we performed a detailed and systematic study on the electrical, mechanical, and thermal transport properties of Ge 2 Sb 2 Se 4 Te alloy using first-principles calculations. The results show that Young's modulus and shear modulus of Ge 2 Sb 2 Se 4 Te are anisotropic, originating from its layered crystal structure. Besides, Poisson's ratio suggests that the in-plane bonding of Ge 2 Sb 2 Se 4 Te was mainly ionic-covalent bonding, while the out-ofplane bonding was of van der Waals (vdW) interaction character. The chemical bond difference between in-plane and out-of-plane directions induces strong phonon anharmonicity and phonon thermal transport anisotropy. Therefore, layered Ge 2 Sb 2 Se 4 Te exhibited low phonon group velocity and short phonon lifetime, resulting in encouragingly low lattice thermal conductivities of 4.45, 3.54, and 0.41 W/mK along the x-axis, y-axis, and z-axis at 300 K, respectively. Furthermore, the calculated electronic structure revealed the metallicity character of Ge 2 Sb 2 Se 4 Te alloy without a pronounced bandgap, which made this material applicable to thermal insulation materials rather than traditional thermoelectric materials. This work was useful to promote the application of Ge 2 Sb 2 Se 4 Te in the field of engineering thermal management and storage devices based on the optical-thermal mechanism. KEYWORDS: Ge 2 Sb 2 Se 4 Te, lattice thermal conductivity, engineering thermal management, first-principles calculations, thermoelectric, phonon

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Section: Resultsmentioning

confidence: 99%

Section: Mechanical Propertiesmentioning

confidence: 99%

Systematic Study on Electronic, Mechanical, and Thermal Transport Properties of Germanium Antimony Selenide Telluride Alloy by a First-Principles Approach

Lian,

Li,

Liu

et al. 2023

ACS Appl. Energy Mater.

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“…293 A further increase of strain will cause a significantly strong interlayer interaction which will arouse hydrodynamic phonon transport in bilayer graphene and thus increase the κ. 294…”

Section: A Strain Engineeringmentioning

confidence: 99%

Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications

et al. 2023

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“…ii) Some lowlying optical branches arising from the interlayer interactions hold much lower group velocities, thereby contributing less to the κ l . For the case of graphene with stronger phonon scattering in bilayer counterpart, the κ l is diminished by ≈30% at 300 K. [29] From a broader view, it is interesting to note that the κ l ratio between monolayer and bilayer systems is gradually lower from graphene (1.64) to h-BN (1.33), [38] h-BP (1.12), and then an abnormal ratio below 1.0 occurs in h-BAs (0.58), [6] which implies the increasingly stronger interlayer interactions from graphene to h-BAs as demonstrated by the calculated electron localization function (see Figure S1, Supporting Information).…”

Section: The Comparison Of Phonon Transport Properties For Mlbp and Blbpmentioning

confidence: 99%

Anomalous Thermal Transport Driven by Electron–Phonon Coupling in 2D Semiconductor h‐BP

Zhou

Yang

et al. 2022

Adv Funct Materials

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The electron–phonon coupling (EPC) in semiconductors is typically much weaker than phonon–phonon scattering and its effect on lattice thermal conductivity κl has long been considered negligible. Herein, using first‐principle calculations, it is discovered that the EPC can be significant or even dominant over the intrinsic phonon–phonon scattering via doping in 2D semiconductor hexagonal boron phosphorus (h‐BP). Filling electron pocket till van Hove singularity gradually strengthens the EPC and consequently diminishes the room‐temperature κl by 25% and 80% for monolayer and bilayer h‐BP, respectively. Strikingly, at high doping levels, the EPC drives phonon transport in bilayer h‐BP to an anomalous regime where κl becomes nearly temperature (T) independent deviated from the intrinsic 1/T trend. This distinctive behavior is governed by the joint effects of horizontal mirror symmetry breaking, and weak phonon–phonon scattering stemming from the predominance of normal processes. Further considering electronic contributions, the abnormal T‐independent thermal conductivity is still reserved, thereby facilitating the experimental exploration of EPC effect on κl. This study unveils the exotic thermal transport phenomenon in one‐atom‐thick 2D semiconductors and offers a unique avenue to manipulate heat flow by externally controlling the EPC, which calls for future experimental verification.

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Erratum: Hydrodynamically enhanced thermal transport due to strong interlayer interactions: A case study of strained bilayer graphene [Phys. Rev. B 105, 125406 (2022)]

Cited by 4 publications

References 0 publications

Systematic Study on Electronic, Mechanical, and Thermal Transport Properties of Germanium Antimony Selenide Telluride Alloy by a First-Principles Approach

Systematic Study on Electronic, Mechanical, and Thermal Transport Properties of Germanium Antimony Selenide Telluride Alloy by a First-Principles Approach

Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications

Anomalous Thermal Transport Driven by Electron–Phonon Coupling in 2D Semiconductor h‐BP

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