Erratum: Spin-dependent electron transport through a magnetic resonant tunneling diode [Phys. Rev. B<b>71</b>, 235301 (2005)]

Havu, P.; Tuomisto, Noora; Väänänen, R.; Puska, Martti J.; Nieminen, R.M.

doi:10.1103/physrevb.73.159901

Cited by 6 publications

(8 citation statements)

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“…The (Zn,Mn)Se-based RTD with highly spin-polarized electron current has been suggested by Egues [8] and experimentally demonstrated by Slobodskyy et al [9]. Also, different types of magnetic RTDs have been proposed both theoretically [10,11,12,13,14,15,16] and experimentally [17,18,19,20,21,22].…”

Section: Introductionmentioning

confidence: 98%

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

Saffarzadeh¹,

Daqiq²

2009

Journal of Applied Physics

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We study theoretically the quantum size effects of a magnetic resonant tunneling diode ͑RTD͒ with a ͑Zn,Mn͒Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to the difference in the thickness of the nonmagnetic layers. It is found that the structural asymmetry can greatly affect the traversal time and the spin polarization of the electrons tunneling through the magnetic RTD. The results indicate that, by choosing suitable values for the thickness of the layers, one can design a high-speed and perfect spin-filter diode.

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Section: Introductionmentioning

confidence: 98%

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

Saffarzadeh¹,

Daqiq²

2009

Journal of Applied Physics

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“…For a certain range of parameters of the system in an applied external electric field, two clear peaks of the current are observed experimentally [7]. Recently, similar systems with different configurations of barriers, for example twoand one-barrier spin filters, become very popular [8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 98%

Spin polarization in semimagnetic semiconductor two-barrier spin filters

Lev¹

2008

Semicond. phys. quantum electron. optoelectron.

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The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier resonant tunneling system with a semimagnetic CdMnTe well is studied. The level splitting in the semimagnetic well under an external magnetic field, caused by giant Zeeman splitting, allows one to achieve a high level of spin polarization of the current flowing through the spin filter. The current polarization degree depending on different parameters of the system such as the carrier density, concentration of magnetic ions, temperature, and the strength of the external magnetic and electric fields is analyzed.

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“…This leads to the separation of both the spin current components and consequently to the spin polarization of the net current. The operation of the paramagnetic RTD based on ZnSe/ZnBeSe/ZnMnSe heterostructure as a spin filter has been experimentally demonstrated by Slobodskyy et al 17 and theoretically described by Havu et al 28 Recently, the spin polarization of the current in the paramagnetic RTD has been reported at zero magnetic field. 18 All these studies of the spin-polarized currents in the magnetic RTDs were devoted to the stationary (steady) currents.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode

et al. 2012

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A spin-and time-dependent electron transport has been studied in a paramagnetic resonant tunneling diode using the self-consistent Wigner-Poisson method. Based on the calculated currentvoltage characteristics in an external magnetic field we have demonstrated that under a constant bias both the spin-up and spin-down current components exhibit the THz oscillations in two different bias voltage regimes. We have shown that the oscillations of the spin-up (down) polarized current result from the coupling between the two resonance states: one localized in the triangular quantum well created in the emitter region and the second localized in the main quantum well. We have also elaborated the one-electron model of the current oscillations, which confirms the results obtained with the Wigner-Poisson method. The spin current oscillations can lower the effectiveness of spin filters based on the paramagnetic resonant tunneling structures and can be used to design the generators of the spin polarized current THz oscillations that can operate under the steady bias and constant magnetic field. a

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Erratum: Spin-dependent electron transport through a magnetic resonant tunneling diode [Phys. Rev. B71, 235301 (2005)]

Cited by 6 publications

References 0 publications

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

Spin polarization in semimagnetic semiconductor two-barrier spin filters

Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode

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